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AP9468GH-HF

Description
Fast Switching Characteristic
CategoryDiscrete semiconductor    The transistor   
File Size104KB,5 Pages
ManufacturerAPEC
Environmental Compliance
Download Datasheet Parametric Compare View All

AP9468GH-HF Overview

Fast Switching Characteristic

AP9468GH-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerAPEC
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.007 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)300 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
AP9468GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D3
40V
7mΩ
75A
S
Description
AP9468 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP9468GJ) are available for low-profile
applications.
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
3
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
.
Rating
40
+20
75
57
300
89
0.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value
1.4
62.5
110
Units
℃/W
℃/W
℃/W
1
201509104
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice

AP9468GH-HF Related Products

AP9468GH-HF AP9468GH-HF_16 AP9468GJ-HF
Description Fast Switching Characteristic Fast Switching Characteristic Fast Switching Characteristic
Is it Rohs certified? conform to - conform to
Maker APEC - APEC
Parts packaging code TO-252 - TO-251
package instruction SMALL OUTLINE, R-PSSO-G2 - IN-LINE, R-PSIP-T3
Contacts 4 - 3
Reach Compliance Code compli - compli
ECCN code EAR99 - EAR99
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 40 V - 40 V
Maximum drain current (ID) 75 A - 75 A
Maximum drain-source on-resistance 0.007 Ω - 0.007 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252 - TO-251
JESD-30 code R-PSSO-G2 - R-PSIP-T3
Number of components 1 - 1
Number of terminals 2 - 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type N-CHANNEL - N-CHANNEL
Maximum pulsed drain current (IDM) 300 A - 300 A
surface mount YES - NO
Terminal form GULL WING - THROUGH-HOLE
Terminal location SINGLE - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
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