AP9468GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Lower Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D3
40V
7mΩ
75A
S
Description
AP9468 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP9468GJ) are available for low-profile
applications.
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
3
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
.
Rating
40
+20
75
57
300
89
0.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value
1.4
62.5
110
Units
℃/W
℃/W
℃/W
1
201509104
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
AP9468GH/J-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
40
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.01
-
-
-
75
-
-
-
36
4
20
8
62
36
16
365
325
1.8
Max. Units
-
-
7
9
1.5
-
1
25
+100
58
-
-
-
-
-
-
-
-
2.7
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=250uA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
V
GS
=10V, I
D
=45A
V
GS
=4.5V, I
D
=30A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=30A
V
DS
=40V, V
GS
=0V
V
GS
=+20V
I
D
=30A
V
DS
=30V
V
GS
=4.5V
V
DS
=20V
I
D
=30A
R
G
=1.0Ω,V
GS
=10V
R
D
=0.67Ω
GS
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=32V, V
GS
=0V
.
V =0V
2235 3580
V
DS
=25V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=30A, V
GS
=0V
I
S
=20A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
38
30
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A
4.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9468GH/J-HF
240
240
T
C
=25 C
200
o
I
D
, Drain Current (A)
160
I
D
, Drain Current (A)
10V
7.0 V
5.0V
4.5 V
T
C
=150
o
C
200
10V
7 .0V
5.0V
4.5 V
160
120
120
V
G
= 3.0 V
80
V
G
=3.0V
80
40
40
0
0.0
2.0
4.0
6.0
8.0
0
0.0
2.0
4.0
6.0
8.0
10.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
8
2.0
I
D
=30A
T
C
=25 C
7
1.6
o
I
D
=45A
V
G
=10V
R
DS(ON)
(m
Ω
)
Normalized R
DS(ON)
6
.
1.2
5
0.8
4
2
4
6
8
10
0.4
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8.0
40
T
j
=150 C
30
o
T
j
=25 C
o
7.0
R
DS(ON)
(m
Ω
)
I
S
(A)
V
GS
=4.5V
6.0
20
V
GS
=10V
10
5.0
0
0
0.4
0.8
1.2
1.6
4.0
0
20
40
60
80
V
SD
, Source-to-Drain Voltage (V)
I
D
, Drain Current (A)
Fig 5. Forward Characteristic of
Fig 6. On-Resistance vs. Drain Current
Reverse Diode
3
AP9468GH/J-HF
16
10000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
I
D
=30A
12
C (pF)
V
DS
=20V
V
DS
=25V
V
DS
=30V
8
C
iss
1000
4
C
oss
C
rss
0
0
20
40
60
80
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor = 0.5
100
Normalized Thermal Response (R
thjc
)
100us
I
D
(A)
10
0.2
0.1
1
1ms
10ms
100ms
DC
T
C
=25
o
C
Single Pulse
.
0.1
0.05
P
DM
t
0.02
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
Single Pulse
0
0.1
1
10
100
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
240
V
DS
=5V
200
V
G
T
j
=25 C
o
I
D
, Drain Current (A)
T
j
=150 C
o
Q
G
160
4.5V
120
Q
GS
Q
GD
80
40
Charge
0
Q
0
1
2
3
4
5
6
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP9468GH/J-HF
MARKING INFORMATION
TO-251
9468GJ
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
9468GH
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
.
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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