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BU505F

Description
POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size65KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BU505F Overview

POWER TRANSISTOR

BU505F Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)2.5 A
ConfigurationSingle
Minimum DC current gain (hFE)2.2
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)20 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)7 MHz
DISCRETE SEMICONDUCTORS
DATA SHEET
BU505F; BU505DF
Silicon diffused power transistors
Product specification
Supersedes data of December 1991
File under Discrete Semiconductors, SC06
1997 Aug 13

BU505F Related Products

BU505F BU505DF
Description POWER TRANSISTOR POWER TRANSISTOR
Is it Rohs certified? incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow
Maximum collector current (IC) 2.5 A 2.5 A
Configuration Single Single
Minimum DC current gain (hFE) 2.2 2.2
JESD-609 code e0 e0
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 20 W 20 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 7 MHz 7 MHz
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