F206R6A150SB
target datasheet
flowPACK 2
Features
●
Inverter, blocking diodes
●
Built-in thermistor
●
IGBT3 technology for low saturation losses
600V/150A
flow2 housing
Target Applications
●
Power Regeneration
Schematic
Types
●
30-F206R6A150SB-M445E
●
30-F206R6A150SB01-M445E10
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Blocking Diode
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
t
p
=10ms
It
P
tot
T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
2
1600
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
200
200
1000
T
j
=25°C
5000
123
186
150
V
A
A
A
2
s
W
°C
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
V
CE
I
C
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
V
CE
≤
600V, Tj
≤
Top max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
150
150
450
450
207
316
±20
6
360
175
V
A
A
A
W
V
μs
V
°C
copyright
by
Vincotech
1
Revision: 3
F206R6A150SB
target datasheet
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
52
70
100
85
129
175
V
A
A
W
°C
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Comparative tracking index
CTI
V
is
t=2s
DC voltage
4000
min 12.7
min 12.7
>200
V
mm
mm
copyright
by
Vincotech
2
Revision: 3
F206R6A150SB
target datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Blocking Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
V
F
V
to
r
t
I
r
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
1600
150
150
150
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1.19
1.16
0.9
0.79
3
4
1.9
V
V
mΩ
0.05
1.1
0.57
K/W
0.38
mA
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
±15
480
150
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgoff=8
Ω
Rgon=8
Ω
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
V
CE
=V
GE
15
0
20
600
0
0.0024
150
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5.8
1.44
1.64
6.5
2.1
0.5
1400
none
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
9240
576
274
940
0.46
K/W
0.30
nC
pF
V
V
mA
nA
Ω
ns
±15
300
150
mWs
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
Erec
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
Rgon=8
Ω
±15
300
50
50
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1.42
1.29
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
1.12
K/W
0.74
2.1
V
A
ns
μC
A/μs
mWs
copyright
by
Vincotech
3
Revision: 3
F206R6A150SB
target datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
B
(25/100)
Tol. ±3%
Tol. ±3%
R
ΔR/R
P
R100=1486
Ω
Tj=25°C
Tc=100°C
Tc=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
-5
200
2
3950
3996
B
22000
5
Ω
%
mW
mW/K
K
K
Module Properties
Thermal resistance, case to heatsink
Module stray inductance
Chip module lead resistance, terminals -chip
Mounting torque
Terminal connection torque
Weight
R
thCH
L
sCE
R
cc'1+EE'
M
M
G
3.8
6.7
tbd.
5
tbd.
4
7
tbd.
4.2
7.4
K/W
nH
mΩ
Nm
Nm
g
copyright
by
Vincotech
4
Revision: 3
F206R6A150SB
target datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
17mm housing
17mm housing, without thermistor
Ordering Code
30-F206R6A150SB-M445E
30-F206R6A150SB01-M445E10
in DataMatrix as
M445-E
M445-E10
in packaging barcode as
M445-E
M445-E10
Outline
Pinout
copyright
by
Vincotech
5
Revision: 3
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