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30-F212R6A050SC-M447E

Description
IGBT4 technology for low saturation losses
File Size1MB,18 Pages
ManufacturerVincotech
Websitehttps://www.vincotech.com/
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30-F212R6A050SC-M447E Overview

IGBT4 technology for low saturation losses

30-F212R6A050SC-M447-E-PM
30-F212R6A050SC01-M447E10-PM
flowPACK 2
Features
Inverter, blocking diodes
Built-in thermistor
IGBT4 technology for low saturation losses
1200V/50A
flowPACK 2
Target Applications
Power Regeneration
Schematic
Types
30-F212R6A050SC-M447E
30-F212R6A050SC01-M447E10
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
D7,D8
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
t
p
=10ms
It
P
tot
T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
2
1600
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
154
208
1270
T
j
=25°C
2400
189
287
150
V
A
A
A
2
s
W
°C
T1,T2,T3,T4,T5,T6
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
V
CE
I
C
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
VCE
1200V, Tj
Top max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
59
76
150
100
163
247
20
10
800
175
V
A
A
A
W
V
µs
V
°C
Copyright by Vincotech
1
Revision: 1

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