Standard Products
RadHard-by-Design
RHD5901 Quad Operational Amplifier
Hi-Z Output Control
www.aeroflex.com/RHDseries
April 8, 2013
FEATURES
Single power supply operation (3.3V to 5.0V) or dual power supply operation (±1.65 to ±2.5V)
Radiation performance
- Total dose:
>1Mrad(Si); Dose rate = 50 - 300 rads(Si)/s
- ELDRS Immune
- SEL Immune
>100 MeV-cm
2
/mg
- Neutron Displacement Damage >10
14
neutrons/cm
2
Rail-to-Rail input and output range
Enable pin to Enable/Disable amplifiers in pairs.
Short Circuit Tolerant
Full military temperature range
Designed for aerospace and high reliability space applications
Packaging – Hermetic ceramic SOIC
- 16-pin, .411"L x .293"W x .105"Ht
- Weight - 0.8 grams max
Aeroflex Plainview’s Radiation Hardness Assurance Plan is DLA Certified to MIL-PRF-38534, Appendix G.
GENERAL DESCRIPTION
Aeroflex’s RHD5901 is a radiation hardened, single supply, quad operational amplifier with enable in a
16-pin SOIC package. The RHD5901 design uses specific circuit topology and layout methods to mitigate
total ionizing dose effects and single event latchup. These characteristics make the RHD5901 especially
suited for the harsh environment encountered in Deep Space missions. It is guaranteed operational from
-55°C to +125°C. Available screened in accordance with MIL-PRF-38534 Class K, the RHD5901 is ideal
for demanding military and space applications.
ORGANIZATION AND APPLICATION
The RHD5901 amplifiers are capable of rail-to-rail input and outputs. Performance characteristics listed are
for general purpose operational 5V CMOS amplifier applications. The amplifiers will drive substantial
resistive or capacitive loads and are unity gain stable under normal conditions. Resistive loads in the low
kohm range can be handled without gain derating and capacitive loads of several nF can be tolerated.
CMOS device drive has a negative temperature coefficient and the devices are therefore inherently tolerant
to momentary shorts, although on chip thermal shutdown is not provided. All inputs and outputs are diode
protected.
The devices will not latch with SEU events to above 100 MeV-cm
2
/mg. Total dose degradation is minimal
to above 1Mrad(Si). Displacement damage environments to neutron fluence equivalents in the mid 10
14
neutrons per cm
2
range are readily tolerated. There is no sensitivity to low-dose rate (ELDRS) effects. SEU
effects are application dependent.
The RHD5901 is configured with enable/disable control. Pairs of amplifiers are put in a power-down
condition with their outputs in a high impedance state. Several useful operational amplifier configurations
are supported where more than one amplifier can feed an output with others disabled.
SCD5901 Rev F
ABSOLUTE MAXIMUM RATINGS
Parameter
Case Operating Temperature Range
Storage Temperature Range
Junction Temperature
Supply Voltage
V
CC
- V
EE
Input Voltage
Lead Temperature (soldering, 10 seconds)
Thermal Resistance, Junction to Case,jc
ESD Rating (MIL-STD-883, Method 3015, class 2)
Power @ 25°C
Range
-55 to +125
-65 to +150
+150
+6.0
V
CC
+0.4
V
EE
-0.4
300
7
2,000 - 3,999
200
Units
°C
°C
°C
V
V
°C
°C/W
V
mW
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress rating only;
functional operation beyond the “Operation Conditions” is not recommended and extended exposure beyond the “Operation Conditions” may affect
device reliability.
RECOMMENDED OPERATING CONDITIONS
Symbol
+V
CC
V
CM
Power Supply Voltage
Input Common Mode Range
Parameter
Typical
3.3 to 5.0
V
CC
to V
EE
Units
V
V
ELECTRICAL PERFORMANCE CHARACTERISTICS
(T
C
= -55°C
TO
+125°C, +V
CC
= +5.0V -- U
NLESS OTHERWISE SPECIFIED
)
Symbol
1/
I
CCQ
V
OS
I
OS
I
B
CMRR
PSRR
V
OH
V
OL
I
O
(
SINK
)
2/
I
O
(
SOURCE
)
SR
R
OUT
= 3.6 Kohms to GND
R
OUT
= 3.6 Kohms to V
CC
V
OUT
to V
CC
V
OUT
to V
EE
R
L
= 8K, Gain = 1
-30
45
2.0
3.3
Tc = +25°C, -55°C 1/
Tc = +125°C
Conditions
EN = 1, No Load
EN = 0,
2/
-3
-100
-100
-1000
70
70
4.9
0.1
-75
55
0.80
10
10
100
90
90
Min
Parameter
Quiescent Supply Current
Input Offset Voltage 1/
Input Offset Current
Input Bias Current
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Output Voltage High
Output Voltage Low
Short Circuit
Output Current
Slew Rate
1/
1/
Typ
4.7
Max
5.5
300
3
100
100
1000
Units
mA
nA
mV
pA
pA
dB
dB
V
V
mA
mA
V/uS
SCD5901 Rev F 4/8/13
3
Aeroflex Plainview
ELECTRICAL PERFORMANCE CHARACTERISTICS (continued)
(T
C
= -55°C
TO
+125°C, +V
CC
= +5.0V -- U
NLESS OTHERWISE SPECIFIED
)
Symbol
A
OL
UGBW
V
HI
V
LO
I
EN
R
L
= 2K, f = 1.0KHz
e
n
m
F = 5 kHz
Tc = +25°C, No load
30
84
15
No Load
R
L
= 10K
High (Enabled)
Low (Disabled)
Conditions
Min
90
4
3.5
1.5
10
Parameter
Open Loop Gain 1/
Unity Gain Bandwidth 1/
Input Voltage - Enable (EN_AB,
EN_CD)
Input Current - Enable
(EN_AB, EN_CD)
Channel Separation 2/
Input-Referred Voltage Noise 2/
Phase Margin 2/
Typ
100
6.5
Max
Units
dB
MHz
V
V
nA
dB
nV/
Hz
Deg
Notes:
1/ Specification derated to reflect Total Dose exposure to 1 Mrad(Si) @ +25°C.
2/ Not tested. Shall be guaranteed by design, characterization, or correlation to other test parameters.
(T
C
= -55°C
TO
+125°C, +V
CC
= +5.0V -- U
NLESS OTHERWISE SPECIFIED
)
Parameter
Output Delay (Enabled) 2/
Output Delay (Disabled) 2/
SWITCHING CHARACTERISTICS
Symbol
t
ON
EN
t
OFF
EN
Conditions
Min
Max
500
100
Units
ns
ns
ENABLES
(EN_AB or EN_CD)
V
CC
50%
GND
t
ON
EN
V
CC
VOUT
(V
OUT
_A&B or V
OUT
_C&D)
HI Z
HI Z
GND
t
OFF
EN
FIGURE 3: RHD5901 SWITCHING DIAGRAM
SCD5901 Rev F 4/8/13
4
Aeroflex Plainview
Embedded System
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