®
LY61L12816
Rev. 1.0
128K X 16 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Description
Initial Issued
Issue Date
May.26.2008
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY61L12816
Rev. 1.0
128K X 16 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY61L12816 is a 2,087,152-bit low power
CMOS static random access memory organized as
131,072 words by 16 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY61L12816 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY61L12816 operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
FEATURES
Fast access time : 10/12/15/20/25ns
Very low power consumption:
Operating current(Normal version):
200/180/150/110/90mA(TYP.)
Operating current(15/20/25ns LL version):
45/40/35mA(TYP.)
Standby current(Normal version):
0.5mA(TYP.)
Standby current(15/20/25ns LL version):
20µA(TYP.)
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 2.0V (MIN.)
Lead free and green package available
Package : 44-pin 400 mil TSOP-II
PRODUCT FAMILY
Product
Family
LY61L12816
LY61L12816
LY61L12816(LL)
Operating
Temperature
0 ~ 70℃
0 ~ 70℃
0 ~ 70℃
Vcc Range
3.15 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
Speed
10/12ns
15/20/25ns
15/20/25ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
0.5mA
200/180mA
0.5mA
150/110/90mA
20µA(LL)
45/40/35mA(LL)
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY61L12816
Rev. 1.0
128K X 16 BIT HIGH SPEED CMOS SRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0 - A16
CE#
WE#
OE#
LB#
UB#
V
CC
V
SS
I/O DATA
CIRCUIT
COLUMN I/O
DQ0 – DQ15 Data Inputs/Outputs
DECODER
128Kx16
MEMORY ARRAY
A0-A16
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
CE#
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY61L12816
Rev. 1.0
128K X 16 BIT HIGH SPEED CMOS SRAM
PIN CONFIGURATION
A4
A3
A2
A1
A0
CE#
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE#
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
TSOP II
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE#
UB#
LB#
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Terminal Voltage with Respect to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
Soldering Temperature (under 10 sec)
SYMBOL
V
TERM
T
A
T
STG
P
D
I
OUT
T
SOLDER
RATING
-0.5 to 4.6
0 to 70(C grade)
-65 to 150
1
50
260
UNIT
V
℃
℃
W
mA
℃
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
LY61L12816
3
®
LY61L12816
Rev. 1.0
128K X 16 BIT HIGH SPEED CMOS SRAM
TRUTH TABLE
MODE
Standby
Output Disable
Read
CE#
H
L
L
L
L
L
L
L
L
OE#
X
H
X
L
L
L
X
X
X
WE# LB#
X
H
X
H
H
H
L
L
L
X
X
H
L
H
L
L
H
L
UB#
X
X
H
H
L
L
H
L
L
I/O OPERATION
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
D
OUT
High – Z
High – Z
D
OUT
D
OUT
D
OUT
D
IN
High – Z
High – Z
D
IN
D
IN
D
IN
SUPPLY CURRENT
I
SB1
I
CC
I
CC
Write
Note:
I
CC
H = V
IH
, L = V
IL
, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
SYMBOL
V
CC
V
IH
*2
V
IL
I
LI
I
LO
V
OH
V
OL
*1
TEST CONDITION
-10/12
-15/20/25
V
CC
≧
V
IN
≧
V
SS
V
CC
≧
V
OUT
≧
V
SS
,
Output Disabled
I
OH
= -4mA
I
OL
= 8mA
10
12
15
Cycle time = Min.
20
CE# = V
IL
, I
I/O
= 0mA
25
15LL
20LL
25LL
Normal
CE#
≧
V
CC
- 0.2V
15/20/25LL
MIN.
3.15
3.0
2.2
- 0.3
-1
-1
2.4
-
-
-
-
-
-
-
-
-
-
-
TYP.
3.3
3.3
-
-
-
-
*4
MAX.
3.6
3.6
V
CC
+0.3
0.6
1
1
-
0.4
250
220
200
150
115
60
50
45
5
5*
6
50*
UNIT
V
V
V
V
µA
µA
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
Average Operating
Power supply Current
I
CC
Standby Power
Supply Current
I
SB1
-
-
200
180
150
110
90
45
40
35
0.5
10
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
5. 1mA for special request
6. 20µA for special request
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
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