INJ0212AP1
High Speed Switching
Silicon P-channel MOSFET
DESCRIPTION
INJ0210AP1 is a Silicon P-channel MOSFET.
OUTLINE DRAWING
4.4
1.5
UNIT：mm
This product is most suitable for use such as portable
machinery, because of low voltage drive and low on resistance.
S
1.0
1.6
FEATURE
・Input impedance is high, and not necessary to
consider a drive electric current.
・High drain current I
D
=-2.5A
・V
th
is low, and drive by low voltage is possible. V
th
=1.0½2.5V
・Low on Resistance. R
DS(on)
=95mΩ(TYP).
・High speed switching.
D
G
0.5
1.5
3.0
0.4
2.4
MARKING
0.4
TERMINAL CONNECTOR
S：SOURCE
D：DRAIN
G：GATE
JEITA：SC-62
JEDEC：SOT-89
APPLICATION
Switching
MAXIMUM RATING （Ta=25℃）
Symbol
VDSS
VGSS
I
D
(DC)
I
DP
P
D
Tch
Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current(Pulse) ※1
Total Power Dissipation
Channel Temperature
Storage Temperature
Rating
-30
±20
-2.5
-5
750(※2)
150
-55½+150
UNIT
V
V
A
A
mW
℃
℃
EQUIVALENT
D
MARKING
G
Type Name
JJ
S
Lot No．
※1：P
W
≦10µs, Duty cycle≦1%
※2：package mounted on 9mm×19mm×1mm glass-epoxy substrate
ELECTRICAL CHARACTERISTICS （Ta=25℃）
Parameter
Drain-Source Breakdown Voltage
Gate-Source Leak Current
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transfer Admittance
Static Drain-Source On-State Resistance
Input Capacitance
Output Capacitance
Switching Time
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
th
|Y
fs
|
R
DS(ON)
C
iss
C
oss
t
on
t
off
Test Condition
I
D
=-100µA，V
GS
=0V
V
GS
=±20V，I
D
=0A
V
DS
=-30V，V
GS
=0V
I
D
=-250µA，V
DS
=V
GS
V
DS
=-10V，I
D
=-1.2A
I
D
=-0.5A，V
GS
=-4.5V
I
D
=-0.5A，V
GS
=-10V
V
DS
=-10V，V
GS
=0V，f=1MHz
V
DD
=-10V，I
D
=-2.5A，V
GS
=-0½-5V
Limit
MIN
-30
-
-
-1
-
-
-
-
-
-
-
TYP
-
-
-
-
3.0
120
95
500
100
35
50
MAX
-
±10
-1
-2.5
-
-
-
-
-
-
-
Unit
V
µA
µA
V
S
mΩ
pF
ns
ISAHAYA ELECTRONICS CORPORATION
INJ0212AP1
High Speed Switching
Silicon P-channel MOSFET
-1.0
ID - VDS
-10V
Ta = 25℃
-10
Reverse drain current IDR (A)
IDR - VSD
Ta = 25℃
VGS = 0V
Drain current ID (A)
-1
-0.5
-4.5V
-3.0V
-2.8V
VGS = -2.5V
-0.1
0
0
-0.5
-1
-0.01
0
-0.2
-0.4
-0.6 -0.8
-1.0
-1.2
Drain-source voltage VDS (V)
Source-drain voltage VSD (V)
Static drain-source on-state resistance RDS(ON) (Ω)
-10
ID - VGS
Ta = 25℃
VDS = -10V
0.5
0.4
0.3
0.2
0.1
0
0
-2
RDS(ON) - VGS
Ta = 25℃
ID = -0.5A
Drain current ID (A)
-1
-0.1
-0.01
0
-1
-2
-3
-4
-5
Gate-source voltage VGS (V)
-4
-6
-8
-10
Gate-source voltage VGS (V)
Static drain-source on-state resistance RDS(ON) (Ω)
Forward transfer admittance |Yfs| (S)
1
RDS(ON) - ID
Ta = 25℃
VGS =
-
4.5V
10
|Yfs| - ID
Ta = 25℃
VDS =
-
10V
0.1
1.0
0.01
-0.01
-0.1
Drain current ID (A)
-1
0.1
-0.01
-0.1
-1
-10
Drain current ID (A)
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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·
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
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such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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·
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originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
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h
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Jul.2014
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