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2N4239E3

Description
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size53KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2N4239E3 Overview

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

2N4239E3 Parametric

Parameter NameAttribute value
Objectid8059221311
package instructionTO-39, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
TECHNICAL DATA
NPN MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/581
Devices
2N4237
2N4238
2N4239
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS (T
A
= 25
0
C Unless Otherwise noted)
Ratings
Symbol 2N4237 2N4238 2N4239 Units
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Temperature Range
V
CEO
V
CBO
V
EBO
I
C
I
B
P
T
T
op
,
T
stg
Symbol
R
θ
JC
40
50
60
80
6.0
1.0
0.5
1.0
6.0
-65 to +200
Max.
29
80
100
Vdc
Vdc
Vdc
Adc
Adc
W
W
°C
Unit
C/W
TO-39*
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 5.7 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 34 mW/
0
C for T
C
> +25
0
C
0
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
2N4237
I
C
= 100 mAdc
2N4238
2N4239
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
Collector-Emitter Cutoff Current
V
CE
= 90 Vdc, V
BE
= 1.5 Vdc
2N4237
V
CE
= 50 Vdc
2N4238
V
CE
= 80 Vdc
2N4239
V
CE
= 10 Vdc
Collector-Base Cutoff Current
2N4237
V
CE
= 50 Vdc
2N4238
V
CE
= 80 Vdc
2N4239
V
CE
= 10 Vdc
V
(
BR
)
CEO
50
80
100
0.5
Vdc
I
EBO
mAdc
I
CEX
100
100
100
100
100
100
nAdc
I
CBO
nAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

2N4239E3 Related Products

2N4239E3 2N4238E3 2N4237E3
Description Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
package instruction TO-39, 3 PIN CYLINDRICAL, O-MBCY-W3 TO-39, 3 PIN
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A
Collector-emitter maximum voltage 80 V 60 V 40 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 30 30 30
JEDEC-95 code TO-39 TO-39 TO-39
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON
Objectid 8059221311 - 8059221309

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