JIEJIE MICROELECTRONICS CO. , Ltd
JST130 Series
DESCRIPTION:
JST130 series triacs with low holding and
latching current are especially recommended
for use on middle and small resistance type
power load.
1
3
2
1
0.8A TRIACs
Re v.4.0
SOT-23-3L
3
SOT-223
T1(1)
2
MAIN FEATURES
Symbol
I
T(RMS)
V
TM
Value
0.8
1.5
Unit
1
3 2
G(3)
A
V
TO-92
T2(2)
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage (T
j
=25℃)
Repetitive peak reverse voltage (T
j
=25℃)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
TO-92 (T
C
=50℃)
RMS on-state current
SOT-223 (T
C
=65℃)
SOT-23-3L (T
C
=60℃)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I
2
t value for fusing (tp=10ms)
Critical rate of rise of on-state
current (I
G
=2×I
GT
)
Peak gate current
Average gate power dissipation
Ⅰ-Ⅱ-Ⅲ
Ⅳ
dI/dt
10
I
GM
P
G(AV)
1
0.1
A
W
I
TSM
I
2
t
9
0.4
50
A/μs
A
A
2
s
I
T(RMS)
0.8
A
Symbol
T
stg
T
j
V
DRM
V
RRM
V
DSM
V
RSM
Value
-40 - 150
-40 - 125
600/700
600/700
V
DRM
+100
V
RRM
+100
Unit
℃
℃
V
V
V
V
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JST130 Series
Peak gate power
JieJie Microelectronics CO. , Ltd
P
GM
1
W
ELECTRICAL CHARACTERISTICS
(T
j
=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Quadrant
D
Ⅰ-Ⅱ-Ⅲ
I
GT
V
D
=12V
V
GT
V
GD
I
L
I
H
dV/dt
V
D
=V
DRM
T
j
=125℃
R
L
=3.3KΩ
I
G
=1.2I
GT
I
T
=100mA
V
D
=2/3V
DRM
Gate Open T
j
=125℃
Ⅳ
ALL
ALL
Ⅰ-Ⅲ-Ⅳ
Ⅱ
MAX
20
MAX
MIN
7
30
15
5
5
mA
V/μs
MAX
10
MAX
MIN
10
1.3
0.2
5
mA
5
V
V
5
T
5
mA
Unit
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Parameter
I
TM
=1.1A tp=380μs
V
D
=V
DRM
V
R
=V
RRM
T
j
=25℃
T
j
=25℃
T
j
=125℃
Value(MAX)
1.5
5
100
Unit
V
μA
μA
THERMAL RESISTANCES
Symbol
Parameter
TO-92
R
th(j-c)
junction to case(AC)
SOT-223
SOT-23-3L
Value
75
45
50
℃/W
Unit
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JST130 Series
ORDERING INFORMATION
JieJie Microelectronics CO. , Ltd
J
JieJie Microelectronics Co.,Ltd
ST
TRIACs
130
U
-600
D
T:I
GT1-4
≤5mA
D:I
GT1-3
≤5mA
I
GT4
≤10mA
600:V
DRM
/V
RRM
≥600V
800:V
DRM
/V
RRM
≥800V
I
T(RMS)
:0.8A
L:SOT-23-3L
U:TO-92 V:SOT-223
PACKAGE MECHANICAL DATA
N
Dimensions
C
N
Ref.
Millimeters
Min.
Typ.
Max.
5.20
5.33
4.19
0.533
0.80
1.1
1.27
2.30
-
-
-
0.50
15.0
2.66
2.06
4.3
Min.
0.175
0.170
0.125
0.016
0.024
-
-
-
0.014
0.500
0.080
0.073
-
Inches
Typ.
Max.
0.205
0.210
0.165
0.021
0.031
0.043
0.050
0.091
-
-
-
0.020
0.591
0.105
0.081
0.169
V
F
A
5m
m
4.45
4.32
3.18
0.407
0.60
-
-
-
0.36
12.70
2.04
1.86
-
A
Φ
M
1.
ax
B
C
D
B
H
E
F
G
E
P
K
H
J
K
D
G
J
N
P
TO-92
V
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JST130 Series
PACKAGE MECHANICAL DATA
G
JieJie Microelectronics CO. , Ltd
Dimensions
Ref.
Millimeters
Min.
Typ.
Max.
Min.
Inches
Typ.
Max.
0.116
0.115
0.075
0.36 0.013
1.60
1.17
0.15
0.25
0.55 0.010
0.063
0.046
0.006
0.022
0.014
H
A
B
C
D
2.65
2.92
1.90
0.34
2.95 0.104
A
E
D
C
B
F
E
F
G
SOT-23-3L
H
FIG.1:
Maximum power dissipation versus RMS
on-state current
P(w)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
I
T(RMS)
(A)
0.4
0.6
0.8
1.0
FIG.2:
RMS on-state current versus case
temperature
I
T(RMS)
(A)
1.2
1.0
SOT-23-3L
α=180°
0.8
SOT-223
0.6
TO-92
0.4
0.2
0
0
Tc (℃)
25
50
75
100
125
FIG.3: Surge peak on-state current versus
number of cycles
I
TSM
(A)
10.5
t=20ms
FIG.4: On-state characteristics (maximum
values)
I
TM
(A)
10
9
7.5
6
One cycle
Tj=Tjmax
1
4.5
3
1.5
0
1
Number of cycles
10
100
1000
0.1
0
1
2
V
TM
(V)
3
4
5
Tj=25℃
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JST130 Series
FIG.5:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width tp<20ms
(
Ⅰ
-
Ⅱ
-
Ⅲ
:dI/dt < 50A/μs;
Ⅳ
:dI/dt < 10A/μs)
I
TSM
(A)
300
dI/dt(
Ⅰ
-
Ⅱ
-
Ⅲ
)
JieJie Microelectronics CO. , Ltd
FIG.6:
Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
I
GT
,I
H
,I
L
(Tj)/I
GT
,I
H
,I
L
(Tj=25℃)
3.5
3.0
2.5
I
GT
100
dI/dt(
Ⅳ
)
I
TSM
2.0
1.5
I
H
&I
L
1.0
0.5
10
1
0.01
tp(ms)
0.1
1
10
20
0.0
-40
Tj(℃)
-20
0
20
40
60
80
100
120 140
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
from that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the fourth version which is made in 28-Mar.-2015. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright
©
2014 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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