BUD44D2 datasheet, PDF - EEWORLD Datasheet

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BUD44D2: DescriptionPOWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS; CategoryDiscrete semiconductor The transistor; File Size281KB，10 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BUD44D2 Overview

POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS

BUD44D2 Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Manufacturer packaging code	CASE 369A-13
Reach Compliance Code	unknow
Other features	BUILT-IN ANTISATURATION NETWORK
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-based maximum capacity	75 pF
Collector-emitter maximum voltage	400 V
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	8
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	25 W
Maximum power dissipation(Abs)	25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	13 MHz
Maximum off time (toff)	1250 ns
Maximum opening time (tons)	150 ns
VCEsat-Max	0.5 V

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BUD44D2/D

BUD44D2

Advance Information

High Speed, High Gain Bipolar

NPN Power Transistor with

Integrated Collector-Emitter

Diode and Built-in Efficient

Antisaturation Network

The BUD44D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).

High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)

make it ideally suitable for light ballast applications. Therefore, there is no need to

guarantee an hFE window.

Main features:

•

Low Base Drive Requirement

•

High Peak DC Current Gain (55 Typical) @ IC = 100 mA

•

Extremely Low Storage Time Min/Max Guarantees Due to the

H2BIP Structure which Minimizes the Spread

•

Integrated Collector–Emitter Free Wheeling Diode

•

Fully Characterized and Guaranteed Dynamic VCE(sat)

•

“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads

POWER TRANSISTORS

2 AMPERES

700 VOLTS

25 WATTS

CASE 369–07

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It’s characteristics make it also suitable for PFC application.

MAXIMUM RATINGS

Rating

Symbol

VCEO

VCBO

VCES

Value

400

700

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

VEBO

ICM

IBM

Collector Current — Continuous

— Peak (1)

Base Current — Continuous

Base Current

— Peak (1)

*Total Device Dissipation @ TC = 25

*Derate above 25°C

Operating and Storage Temperature

0.2

Watt

TJ, Tstg

– 65 to 150

CASE 369A–13

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

6.7

0.265

THERMAL CHARACTERISTICS

Thermal Resistance

— Junction to Case

— Junction to Ambient

C/W

1.6

0.063

2.3

0.090 0.090

1.6

0.063

θJC

θJA

71.4

260

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from case for 5 seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

≤

10%.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

0.118 .070″

1.8

0.265″

6.7

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