The BUF04 is a wideband, closed-loop buffer that combines
state of the art dynamic performance with excellent dc
performance. This combination enables designers to maximize
system performance without any speed versus dc accuracy
compromises.
Built on a high speed Complementary Bipolar (CB) process for
better power performance ratio, the BUF04 consumes less than
8.5 mA operating from
±5
V or
±15
V supplies. With a 2000 V/µs
min slew rate, and 100 MHz gain bandwidth product, the
BUF04 is ideally suited for use in high speed applications where
low power dissipation is critical.
Full
±
10 V output swing over the extended temperature range
along with outstanding ac performance and high loop gain
accuracy makes the device useful in high speed data acquisition
systems.
High slew rate and very low noise and THD, coupled with wide
input and output dynamic range, make the BUF04 an excellent
choice for video and high performance audio circuits.
The BUF04’s inherent ability to drive capacitive loads over a
wide voltage and temperature range makes it extremely useful
for a wide variety of applications in military, industrial, and
commercial equipment.
The BUF04 is specified over the extended industrial (–40°C to
+85°C) and military (–55°C to +125°C) temperature range.
BUF04s are available in plastic and ceramic DIP plus SO-8
surface mount packages.
Contact your local sales office for MIL-STD-883 data sheet and
availability.
*Patent pending.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
BUF04–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ V =
S
15.0 V, T
A
= +25 C unless otherwise noted)
Min
Typ
Max
Units
Parameter
Symbol
Conditions
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Voltage Range
Offset Voltage Drift
Offset Null Range
OUTPUT CHARACTERISTICS
Output Voltage Swing
V
OS
I
B
V
CM
∆V
OS
/∆T
–40°C
≤
T
A
≤
+85°C
V
CM
= 0
–40°C
≤
T
A
≤
+85°C
0.3
1.3
0.7
2.2
±
13
30
±
25
±
10.5
±
10
±
13
±
13
±
50
±
11.1
±
11
±
13.5
±
13.15
±
65
±
80
1
4
5
10
mV
mV
µA
µA
V
µV/°C
mV
V
V
V
V
mA
mA
V/V
V/V
%
%
dB
dB
mA
mA
V/µs
MHz
MHz
MHz
ns
Degrees
Degrees
%
%
pF
nV/√Hz
pA/√Hz
V
O
R
L
= 150
Ω,
–40°C
≤
T
A
≤
+85°C
R
L
= 2 kΩ,
–40°C
≤
T
A
≤
+85°C
Note 2
R
L
= 2 kΩ
–40°C
≤
T
A
≤
+85°C
R
L
= 1 kΩ, V
O
=
±
10 V
R
L
= 150 kΩ
V
S
=
±
4.5 V to
±
18 V
–40°C
≤
T
A
≤
+85°C
V
O
= 0 V, R
L
=
∞
–40°C
≤
T
A
≤
+85°C
R
L
= 2 kΩ, C
L
= 70 pF
–3 dB, C
L
= 20 pF, R
L
=
∞
–3 dB, C
L
= 20 pF, R
L
= 1 kΩ
–3 dB, C
L
= 20 pF, R
L
= 150
Ω
V
IN
=
±10
V Step to 0.1%
f = 3.58 MHz, R
L
= 150
Ω
f = 4.43 MHz, R
L
= 150
Ω
f = 3.58 MHz, R
L
= 150
Ω
f = 4.43 MHz, R
L
= 150
Ω
Output Current – Continuous
Peak Output Current
TRANSFER CHARACTERISTICS
Gain
Gain Linearity
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current
DYNAMIC PERFORMANCE
Slew Rate
Bandwidth
Bandwidth
Bandwidth
Settling Time
Differential Phase
Differential Gain
Input Capacitance
NOISE PERFORMANCE
Voltage Noise Density
Current Noise Density
I
OUT
I
OUTP
A
VCL
NL
0.995
0.995
0.9985 1.005
0.9980 1.005
0.005
0.008
93
93
6.9
6.9
3000
110
110
110
60
0.02
0.03
0.014
0.008
3
4
2
PSRR
I
SY
76
76
8.5
8.5
SR
BW
BW
BW
2000
e
n
i
n
f = 1 kHz
f = 1 kHz
NOTE
1
Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125
°C
with an LTPD of 1.3.
Specifications subject to change without notice.
–2–
REV. 0
BUF04
ELECTRICAL CHARACTERISTICS
(@ V =
S
5.0 V, T
A
= +25 C unless otherwise noted)
Min
Typ
Max
Units
Parameter
Symbol
Conditions
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Voltage Range
Offset Voltage Drift
Offset Null Range
OUTPUT CHARACTERISTICS
Output Voltage Swing
V
OS
I
B
V
CM
∆V
OS
/∆T
–40°C
≤
T
A
≤
+85°C
V
CM
= 0 V
–40°C
≤
T
A
≤
+85°C
0.8
1.0
0.15
1.6
±
3.0
30
±
25
±
3.0
±
2.75
±
3.0
±
3.0
±
40
2.0
4
5
10
mV
mV
µA
µA
V
µV/°C
mV
V
V
V
V
mA
mA
V/V
V/V
%
dB
dB
mA
mA
V/µs
MHz
MHz
MHz
Degrees
Degrees
%
%
nV/√Hz
pA/√Hz
V
O
R
L
= 150
Ω,
–40°C
≤
T
A
≤
+85°C
R
L
= 2 kΩ,
–40°C
≤
T
A
≤
+85°C
Note 2
R
L
= 2 kΩ,
–40°C
≤
T
A
≤
+85°C
R
L
= 1 kΩ
V
S
=
±
4.5 V to
±
18 V
–40°C
≤
T
A
≤
+85°C
V
O
= 0 V, R
L
=
∞
–40°C
≤
T
A
≤
+85°C
R
L
= 2 kΩ, C
L
= 70 pF
–3 dB, C
L
= 20 pF, R
L
=
∞
–3 dB, C
L
= 20 pF, R
L
= 1 kΩ
–3 dB, C
L
= 20 pF, R
L
= 150
Ω
f = 3.58 MHz, R
L
= 150
Ω
f = 4.43 MHz, R
L
= 150
Ω
f = 3.58 MHz, R
L
= 150
Ω
f = 4.43 MHz, R
L
= 150
Ω
f = 1 kHz
f = 1 kHz
±
3.00
±
3.6
±
3.35
±
75
0.9977 1.005
1.005
0.005
93
93
6.60
6.70
2000
100
100
100
0.13
0.15
0.04
0.06
4
2
Output Current - Continuous
Peak Output Current
TRANSFER CHARACTERISTICS
Gain
Gain Linearity
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current
DYNAMIC PERFORMANCE
Slew Rate
Bandwidth
Bandwidth
Bandwidth
Differential Phase
Differential Gain
NOISE PERFORMANCE
Voltage Noise Density
Current Noise Density
I
OUT
I
OUTP
A
VCL
NL
PSRR
I
SY
0.995
0.995
76
76
8
8
SR
BW
BW
BW
e
n
i
n
NOTE
1
Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125
°C,
with an LTPD of 1.3.
Specifications subject to change without notice.
REV. 0
–3–
BUF04
WAFER TEST LIMITS
(@ V =
S
15.0 V, T
A
= +25 C unless otherwise noted)
Symbol
Conditions
Limit
Units
Parameter
Offset Voltage
Input Bias Current
Power Supply Rejection Ratio
Output Voltage Range
Supply Current
Gain
V
OS
V
OS
I
B
PSRR
V
O
I
SY
A
VCL
V
S
=
±
15 V
V
S
=
±
5 V
V
CM
= 0 V
V =
±
4.5 V to
±
18 V
R
L
= 150
Ω
V
O
= 0 V, R
L
= 2 kΩ
V
O
=
±
10 V, R
L
= 2 kΩ
1
2
5
76
±
10.5
8.5
1
±
0.005
mV max
mV max
µA
max
dB
V min
mA max
V/V
NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
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Microcontroller MCU
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