®
BUF405A
BUF405AFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s
s
s
s
s
s
HIGH SWITCHING SPEED NPN POWER
TRANSISTORS
EASY TO DRIVE
HIGH VOLTAGE FOR OFF-LINE
APPLICATIONS
100 KHz SWITCHING SPEED
LOW COST DRIVE CIRCUITS
LOW DYNAMIC SATURATION
3
3
1
2
APPLICATIONS:
s
SWITCH MODE POWER SUPPLIES
s
MOTOR DRIVERS
DESCRIPTION
These Easy-to-Drive FASTSWITCH NPN power
transistors are specially designed for high
reliability industrial and professional power driving
applications such us motor drives and off-line
switching power supplies. ETD transistors will
operate using easy drive circuits at up to 100KHz;
this helps to simplify designs and improve
reliability. The superior switching performance
and low crossover losses reduce dissipation and
consequently lowers the equipment operating
temperature.
1
2
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
s tg
T
j
Parameter
BUF405A
Collector-Emitter Voltage (V
BE
= -1.5 V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
o
T otal Dissipation at T
c
= 25 C
Storage Temperature
Max O peration Junction T emperature
1000
450
7
7.5
15
3
4.5
80
-65 to 150
150
39
Valu e
BUF405AF P
V
V
V
A
A
A
A
W
o
C
o
C
Un it
January 1999
1/6
BUF405A / BUF405AFP
THERMAL DATA
T O-220
R
t hj-ca se
Thermal Resistance Junction-Case
Max
1.56
TO-220F P
3.2
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CER
I
CEV
I
EBO
Parameter
Collector Cut-off
Current (R
BE
= 5
Ω)
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Cond ition s
V
CE
= V
CEV
V
CE
= V
CEV
T
c
= 100 C
o
Min.
Typ .
Max.
0.1
0.5
0.1
0.5
1
Un it
mA
mA
mA
mA
mA
V
V
V
CE
= V
CEV
V
BE
= -1.5 V
V
CE
= V
CEV
V
BE
= -1.5 V T
c
=100
o
C
V
BE
= 5 V
I
C
= 200 mA
I
E
= 50 mA
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
=
=
=
2.5 A
2.5 A
5 A
5 A
2.5 A
2.5 A
5 A
5 A
I
B
= 0.25 A
I
B
= 0.25 A
I
B
= 1 A
I
B
= 1 A
I
B
I
B
I
B
I
B
=
=
=
=
0.25 A
0.25 A
1 A
1 A
L = 25 mH
450
7
0.8
V
CEO(sus )
∗
Collector-Emitter
Sustaining Voltage
V
EBO
V
CE(sat )
∗
Emitter Base Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
T
c
=100 C
T
c
=100 C
0.9
T
c
=100 C
T
c
=100 C
40
30
60
2.1
o
o
o
o
2.8
0.5
2
1.5
1.1
1.5
V
V
V
V
V
V
V
V
A/µs
A/µs
A/µs
V
V
V
V
µs
µs
µs
V
BE(s at)
∗
Base-Emitt er
Saturation Voltage
di
c
/dt
Rate of rise on-state
Collector Current
V
CC
= 300 V R
C
= 0 t
p
= 3
µs
o
I
B1
= 0.375 A T
j
=25 C
I
B1
= 0.375 A T
j
=100
o
C
o
T
j
=100 C
I
B1
= 1.5 A
V
CC
= 300 V
I
B1
= 0.375 A
V
CC
= 300 V
I
B1
= 0.375 A
I
C
= 2.5 A
V
BB
= - 5 V
V
c la mp
= 400 V
L = 1 mH
I
C
= 2.5 A
V
BB
= - 5 V
V
c la mp
= 400 V
L = 1 mH
IC = 2.5 A
V
BB
= - 5 V
V
c la mp
= 400 V
L = 1 mH
I
C
= 2.5 A
V
BB
= 0
V
c la mp
= 400 V
L = 1 mH
R
C
= 120
Ω
o
T
j
=25 C
o
T
j
=100 C
R
C
= 120
Ω
T
j
=25
o
C
o
T
j
=100 C
V
CC
= 50 V
R
BB
= 2.4
Ω
I
B1
= 0.25 A
V
CC
= 50 V
R
BB
= 2.4
Ω
I
B1
= 0.25 A
o
T
j
=100 C
V
CC
= 50 V
R
BB
= 2.4
Ω
I
B1
= 0.25 A
T
j
=125
o
C
V
CC
= 50 V
R
BB
= 0.6
Ω
I
B1
= 0.25 A
V
CE
(3µs)
Collector-Emitter
Dynamic Voltage
Collector-Emitter
Dynamic Voltage
INDUCTIVE LO AD
Storage Time
Fall Time
Cross O ver T ime
INDUCTIVE LO AD
Storage Time
Fall Time
Cross O ver T ime
Maximum Collector
Emitter Voltage
without Snubber
INDUCTIVE LO AD
Storage Time
Fall Time
Cross O ver T ime
8
1.1
4
0.8
0.05
0.08
1.8
0.1
0.18
500
V
CE
(5µs)
t
s
t
f
t
c
t
s
t
f
t
c
V
CEW
µs
µs
µs
V
t
s
t
f
t
c
1.5
0.04
0.07
µs
µs
µs
2/6
BUF405A / BUF405AFP
ELECTRICAL CHARACTERISTICS
(continued)
Symb ol
t
s
t
f
t
c
V
CEW
Parameter
INDUCTIVE LO AD
Storage Time
Fall Time
Cross O ver T ime
Maximum Collector
Emitter Voltage
without Snubber
INDUCTIVE LO AD
Storage Time
Fall Time
Cross O ver T ime
INDUCTIVE LO AD
Storage Time
Fall Time
Cross O ver T ime
Maximum Collector
Emitter Voltage
without Snubber
Test Cond ition s
I
C
= 2.5 A
V
BB
= 0
V
c la mp
= 400 V
L = 1 mH
IC = 2.5 A
V
BB
= 0
V
c la mp
= 400 V
L = 1 mH
I
C
= 5 A
V
BB
= -5 V
V
c la mp
= 400 V
L = 0.5 mH
I
C
= 5 A
V
BB
= - 5 V
V
c la mp
= 400 V
L = 0.5 mH
ICWoff = 7.5 A
V
BB
= - 5 V
L = 0.33 mH
o
T
j
=125 C
V
CC
= 50 V
R
BB
= 0.6
Ω
I
B1
= 0.25 A
o
T
j
=100 C
V
CC
= 50 V
R
BB
= 0.6
Ω
I
B1
= 0.25 A
o
T
j
=125 C
V
CC
= 50 V
R
BB
= 2.4
Ω
I
B1
= 1 A
V
CC
= 50 V
R
BB
=2.4
Ω
I
B1
= 1 A
o
T
j
=100 C
V
CC
= 50 V
R
BB
= 2.4
Ω
I
B1
= 1.5 A
400
500
Min.
Typ .
Max.
3
0.15
0.25
Un it
µs
µs
µs
V
t
s
t
f
t
c
t
s
t
f
t
c
V
CEW
1.9
0.06
0.12
3.2
0.12
0.3
µs
µs
µs
µs
µs
µs
V
∗
Pulsed: Pulse duration = 300
µs,
duty cycle < 1.5 %
Turn-on Switching Test Circuit
Turn-off Switching Test Circuit
1 Fast electronic switch
2 Non-inductive Resistor
1 F ast electronic switc h 2 Non-inductive Resistor
3 F ast recovery rectifier
3/6
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