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CGH21120F

Description
120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX
CategoryDiscrete semiconductor    The transistor   
File Size2MB,13 Pages
ManufacturerCree
Websitehttp://www.cree.com/
Environmental Compliance
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CGH21120F Overview

120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX

CGH21120F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCree
package instructionROHS COMPLIANT, CERAMIC PACKAGE-2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage120 V
FET technologyHIGH ELECTRON MOBILITY
highest frequency bandS BAND
JESD-30 codeS-CDFM-F2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM NITRIDE
CGH21120F
120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX
Cree’s CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH21120F ideal for 1.8-2.3 GHz WCDMA and LTE amplifier
applications. The transistor is supplied in a ceramic/metal flange package.
Package Type
: 440162
PN: CGH2112
0F
Typical Performance Over 2.0-2.3GHz
(T
C
= 25˚C)
of Demonstration Amplifier
Parameter
Gain @ 43 dBm
ACLR @ 43 dBm
Drain Efficiency @ 43 dBm
2.0 GHz
14.0
-36.5
33.5
2.1 GHz
15.0
-36.0
34.5
2.2 GHz
15.0
-34.0
36.5
2.3 GHz
14.5
-33.5
40.0
Units
dB
dBc
%
Note:
Measured in the CGH21120F-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping,
PAR = 8.81 dB @ 0.01 % Probability on CCDF.
Features
2015
1.8 - 2.3 GHz Operation
15 dB Gain
-35 dBc ACLR at 20 W P
AVE
35 % Efficiency at 20 W P
AVE
High Degree of DPD Correction Can be Applied
Rev 3.1 – June
Subject to change without notice.
www.cree.com/RF
1

CGH21120F Related Products

CGH21120F CGH21120F-AMP CGH21120F-TB
Description 120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX 120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX 120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX
Is it Rohs certified? conform to - conform to
Maker Cree - Cree
package instruction ROHS COMPLIANT, CERAMIC PACKAGE-2 - ROHS COMPLIANT, CERAMIC PACKAGE-2
Contacts 2 - 2
Reach Compliance Code compli - compli
ECCN code EAR99 - EAR99
Shell connection SOURCE - SOURCE
Configuration SINGLE - SINGLE
Minimum drain-source breakdown voltage 120 V - 120 V
FET technology HIGH ELECTRON MOBILITY - HIGH ELECTRON MOBILITY
highest frequency band S BAND - S BAND
JESD-30 code S-CDFM-F2 - S-CDFM-F2
Number of components 1 - 1
Number of terminals 2 - 2
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Package body material CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED
Package shape SQUARE - SQUARE
Package form FLANGE MOUNT - FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type N-CHANNEL - N-CHANNEL
surface mount YES - YES
Terminal form FLAT - FLAT
Terminal location DUAL - DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
transistor applications AMPLIFIER - AMPLIFIER
Transistor component materials GALLIUM NITRIDE - GALLIUM NITRIDE
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