CGH21120F
120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX
Cree’s CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH21120F ideal for 1.8-2.3 GHz WCDMA and LTE amplifier
applications. The transistor is supplied in a ceramic/metal flange package.
Package Type
: 440162
PN: CGH2112
0F
Typical Performance Over 2.0-2.3GHz
(T
C
= 25˚C)
of Demonstration Amplifier
Parameter
Gain @ 43 dBm
ACLR @ 43 dBm
Drain Efficiency @ 43 dBm
2.0 GHz
14.0
-36.5
33.5
2.1 GHz
15.0
-36.0
34.5
2.2 GHz
15.0
-34.0
36.5
2.3 GHz
14.5
-33.5
40.0
Units
dB
dBc
%
Note:
Measured in the CGH21120F-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping,
PAR = 8.81 dB @ 0.01 % Probability on CCDF.
Features
•
•
•
•
•
2015
1.8 - 2.3 GHz Operation
15 dB Gain
-35 dBc ACLR at 20 W P
AVE
35 % Efficiency at 20 W P
AVE
High Degree of DPD Correction Can be Applied
Rev 3.1 – June
Subject to change without notice.
www.cree.com/RF
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current
1
Soldering Temperature
2
Screw Torque
Thermal Resistance, Junction to Case
3
Case Operating Temperature
3
Symbol
V
DSS
V
GS
P
DISS
T
STG
T
J
I
GMAX
I
DMAX
T
S
Rating
84
-10, +2
56
-65, +150
225
30
12
245
80
1.5
-40, +150
Units
Volts
Volts
Watts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
85˚C
25˚C
25˚C
Conditions
25˚C
25˚C
τ
R
θJC
T
C
Note:
1
Current limit for long term, reliable operation.
2
Refer to the Application Note on soldering at
www.cree.com/RF/Document-Library
3
Measured for the CGH21120F at P
DISS
= 56 W.
Electrical Characteristics (T
C
= 25˚C)
Characteristics
DC Characteristics
1
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
2
Drain-Source Breakdown Voltage
V
GS(th)
V
GS(Q)
I
DS
V
BR
-3.8
–
23.2
120
-3.0
-2.7
28.0
–
-2.3
–
–
–
V
DC
V
DC
A
V
DC
V
DS
= 10 V, I
D
= 28.8 mA
V
DS
= 28 V, I
D
= 0.5 A
V
DS
= 6.0 V, V
GS
= 2.0 V
V
GS
= -8 V, I
D
= 28.8 mA
RF Characteristics (T
C
= 25
˚
C, F
0
= 2.15 GHz unless otherwise noted)
Saturated Output Power
3,4,5
Pulsed Drain Efficiency
3,5
Modulated Gain
6
WCDMA Linearity
6
Modulated Drain Efficiency
6
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance
7
Output Capacitance
7
Feedback Capacitance
C
GS
C
DS
C
GD
–
–
–
66
12
1.6
–
–
–
pF
pF
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
P
SAT
η
–
–
13.5
–
29
–
110
70
15
-35
35
–
–
–
–
-30
–
10 : 1
W
%
dB
dBc
%
Y
V
DD
= 28 V, I
DQ
= 0.5 A,
V
DD
= 28 V, I
DQ
= 0.5 A, P
OUT
= P
SAT
V
DD
= 28 V, I
DQ
= 0.5 A, P
OUT
= 43 dBm
V
DD
= 28 V, I
DQ
= 0.5 A, P
OUT
= 43 dBm
V
DD
= 28 V, I
DQ
= 0.5 A, P
OUT
= 43 dBm
No damage at all phase angles,
V
DD
= 28 V, I
DQ
= 0.5 A, P
OUT
= 20 W CW
G
SS
ACLR
η
VSWR
Notes:
1
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3
Pulse Width = 40 μS, Duty Cycle = 5 %.
4
P
SAT
is defined as I
G
= 10 mA peak.
5
Measured in CGH21120F-AMP.
6
Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 67 % Clipping, PAR = 8.81 dB @ 0.01 % Probability on CCDF.
7
Includes package and internal matching components.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH21120F Rev 3.1
Typical Pulse Performance
Typical Pulse Characteristics Output Power, Drain Efficiency, and Gain vs Input Power
CGH21120F Typical Pulsed Transfer
measured in CGH21120F-AMP Amplifier Circuit.
=40uS,
5% Duty Cycle
Vds=28V, Ids=500mA, Frequency=2.15GHz
V
DS
= 28 V, I
DS
= 0.5 A, Freq = 2.15 GHz, Pulse Width = 40
μS,
Duty Cycle = 5 %
80
70
60
Output Power
Drain Efficiency
Gain
18
Gain
17
16
Output Power (dBm)
Drain Efficiency (%)
40
30
20
10
0
0
5
10
15
Output Power
14
13
Efficiency
12
11
10
20
25
30
35
40
Input Power (dBm)
Typical Pulsed Saturated Power vs Frequency
CGH21120F Pulsed Psat vs. Frequency
measured in CGH21120F-AMP Amplifier Circuit.
T=40uS, 5% Duty Cycle
V
DS
= 28 V, I
DS
= 0.5 A, P
SAT
= 10 mA I
GS
Peak, Pulse Width = 40
μS,
Duty Cycle = 5 %
Vds=28V, Ids=500mA, Psat = 10mA Igs peak
52.0
78%
51.5
76%
Saturated Output Power (dBm)
50.5
72%
50.0
70%
49.5
Psat
Drain Efficiency
68%
49.0
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
66%
Frequency (GHz)
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH21120F Rev 3.1
Drain Efficiency (%)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
51.0
74%
Gain (dB)
50
15
Typical Linear Performance
Typical Small
Signal Gain and Return
Loss vs Frequency
CGH21120F Small
Signal Gain and Return
Loss over Frequency
measured in CGH21120F-AMP
CGH21120F-TB
in Broadband Amplifier Circuit,
Amplifier Circuit.
V =28V, I
DS
= 0.5
V
DS
= 28 V, I
=500mA
A
20
19
18
17
DS
DS
0
-2
-4
-6
-8
-10
-12
-14
16
15
14
13
12
11
10
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
Gain
Return Loss
-16
-18
-20
Frequency (GHz)
Typical WCDMA Performance
Typical WCDMA Characteristics ACLR and Drain Efficiency vs Output Power
measured in CGH21120F-AMP Amplifier Circuit.
CGH21120F Typical WCDMA Transfer
3GPP Test Model
Model 1, 64 DPCH 67% clipping, 8.81dB
dB PAR @ 0.01 %
3GPP Test
1, 64 DPCH 67 % Clipping, 8.81
PAR @0.01%
V
DS
= 28
Vds=28V, 35V Ids=500mA, Frequency = 2.15GHz
GHz
V and 35 V, I
DS
= 0.5 A, Frequency = 2.15
-30
-31
-32
-33
-34
-35
-36
-37
-38
-39
-40
-41
-42
-43
-44
-45
25
30
35
40
45
50
45%
42%
39%
36%
33%
27%
24%
21%
18%
15%
12%
9%
6%
3%
0%
30%
28V -ACLR
28V +ACLR
35V -ACLR
35V +ACLR
28V Eff
35V Eff
Output Power (dBm)
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH21120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Drain Efficiency
ACLR (dBc)
Return Loss (dB)
Linear Gain (dB)
Typical WCDMA Digital Pre-Distortion (DPD) Performance
-20
-25
-30
-35
WCDMA Characteristics with and without DPD Correction
ACLR and Drain Efficiency vs Output Power
measured in CGH21120F-AMP Amplifier Circuit.
CGH21120F WCDMA Transfer with and without DPD correction
Single Channel WCDMA 6.5dB
with
with
Single Channel WCDMA 6.5dB PAR
PAR
CFR
CFR
Vds=28V, Ids=500mA, Frequency=2.14GHz
V
DS
= 28 V, I
DS
= 0.5 A, Frequency = 2.14 GHz
UnCorrected -ACLR
UnCorrected +ACLR
Corrected -ACLR
Corrected +ACLR
50%
45%
40%
ACLR (dBc)
-40
-45
-50
-55
-60
-65
-70
15
Corrected Eff
30%
25%
20%
15%
10%
5%
0%
20
25
Output Power (dBm)
30
35
40
45
50
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
2.125
WCDMA Linearity with DPD Linearizer
measured in CGH21120F-AMP
DPD Linearizer
CGH21120F WCDMA Linearity with
Amplifier Circuit.
Single Channel
6.5dB PAR
6.5dB PAR with CFR
WCDMA
WCDMA
with CFR
Pout=44dBm,
d=40%,
= 44 dBm, Efficiency
V
DS
= 28 V, I
DS
= 0.5 A, P
OUT
Vds=28V, Ids=500mA
= 40 %
Uncorrected
DPD Corrected
2.13
2.135
2.14
2.145
2.15
2.155
Frequency (GHz)
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH21120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Drain Efficiency
UnCorrected Eff
35%
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