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BUK436-200B

Description
POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84%
CategoryDiscrete semiconductor    The transistor   
File Size51KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BUK436-200B Overview

POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84%

BUK436-200B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)17 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK436W-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
R
DS(ON)
PARAMETER
BUK436
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
MAX.
-200A
200
19
125
0.16
MAX.
-200B
200
17
125
0.2
UNIT
V
A
W
PINNING - SOT429 (TO247)
PIN
1
2
3
tab
gate
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
SYMBOL
d
g
1
2
3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
-200A
19
12
76
125
150
150
MAX.
200
200
30
-200B
17
11
68
UNIT
V
V
V
A
A
A
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
-
TYP.
-
45
MAX.
1.0
-
UNIT
K/W
K/W
July 1997
1
Rev 1.000

BUK436-200B Related Products

BUK436-200B BUK436-200A
Description POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84% POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86%
Is it Rohs certified? incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow
Configuration Single Single
Maximum drain current (Abs) (ID) 17 A 19 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 125 W 125 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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