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ACE1020M

Description
N-Channel 200-V MOSFET
File Size452KB,7 Pages
ManufacturerACE [ACE Technology Co., Ltd.]
Download Datasheet View All

ACE1020M Overview

N-Channel 200-V MOSFET

ACE1020M
N-Channel 200-V MOSFET
Description
ACE1020M uses advanced trench technology to provide excellent R
DS(ON)
.
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
Low r
DS(on)
trench technology
Low thermal impedance
Fast switching speed
Applications:
PoE Power Sourcing Equipment
PoE Powered Devices
Telecom DC/DC converters
White LED boost converters
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
T
C
=25°C
T
C
=25°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
Unit
V
V
A
A
A
W
°C
200
±20
10
40
10
50
-55 to 175
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal characteristics.
b. Pulse width limited by maximum junction temperature.
Symbol
Maximum
Unit
R
θJA
R
θJC
40
3
°C/W
VER 1.1
1
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