P0102BL
0.25A SCRs
MAIN FEATURES:
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
0.25
200
200
Unit
A
V
µA
A
G
G
K
A
DESCRIPTION
Thanks to highly sensitive triggering levels, the
PO102BL SCR is suitable for all applications
where the available gate current is limited such as
stand-by mode power supplies, smoke and alarm
detectors...
Available in SOT-23, it provides optimized space
saving on high density printed circuit boards.
SOT-23
K
ABSOLUTE RATINGS
(limiting values)
Symbol
I
T(RMS)
I
T(AV)
I
TSM
Parameter
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state
current
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
tp = 8.3 ms
Tj = 25°C
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
6
0.18
50
0.5
0.02
- 40 to + 150
- 40 to + 125
A
2
S
A/µs
A
W
°C
Tamb = 30°C
Tamb = 30°C
Value
0.25
0.17
7
Unit
A
A
A
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
Tj
资料提供：可控硅在线 ½½½½：／／½½½．½½½．½½½．½½
1/5
www.kersemi.com
P0102BL
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
Symbol
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
V
D
= 12 V
V
D
= V
DRM
I
RG
= 10 µA
I
T
= 50 mA
I
G
= 1 mA
I
TM
= 0.4 A
R
GK
= 1kΩ
R
GK
= 1kΩ
R
GK
= 1kΩ
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
tp = 380 µs
R
L
= 140
Ω
R
L
= 3.3 kΩ
R
GK
= 1 kΩ
Tj = 125°C
Test Conditions
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
P0102BL
200
0.8
0.1
8
6
7
200
1.7
1.0
1000
1
100
µA
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
V
D
= 67 % V
DRM
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
THERMAL RESISTANCES
Symbol
R
th(j-a)
Parameter
Junction to ambient (mounted on FR4 with recommended pad layout)
Value
400
Unit
°C/W
PRODUCT SELECTOR
Part Number
P0102BL
Voltage
200 V
Sensitivity
200 µA
Package
SOT-23
ORDERING INFORMATION
P 01 02 B L
SENSITIVE
SCR
SERIES
CURRENT: 0.25A
SENSITIVITY:
02: 200µA
VOLTAGE:
B: 200V
Blank
5AA4
PACKING MODE:
Tape & Reel
PACKAGE:
L: SOT-23
OTHER INFORMATION
Part Number
P0102BL
Marking
P2B
Weight
0.01 g
Base quantity
3000
Packing mode
Tape & reel
2/5
资料提供：可控硅在线 ½½½½：／／½½½．½½½．½½½．½½
www.kersemi.com
P0102BL
Fig. 1:
Maximum average power dissipation
versus average on-state current.
P(W)
0.30
0.28
α
= 180 °
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
360 °
0.08
0.06
0.04
α
0.02
IT(av)(A)
0.00
0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18
Fig. 2:
Average and D.C. on-state current versus
ambient temperature.
IT(av)(A)
0.30
0.25
0.20
0.15
0.10
0.05
Tamb(°C)
0.00
0
25
50
75
100
125
α
= 180°
D.C
Fig. 3:
Relative variation of thermal impedance
junction to ambient versus pulse duration.
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT, IH, IL[Tj] / IGT , IH, IL[Tj = 25 °C]
6
5
4
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
3
2
1
tp(s)
IGT
IH & IL
(Rgk = 1k
Ω)
Tj(°C)
-20
0
20
40
60
80
100
120
140
0.01
1E-2
1E-1
1E+0
1E+1
1E+2
0
-40
Fig. 5:
Relative variation of holding current
versus gate-cathode resistance (typical values).
IH[Rgk] / IH[Rgk = 1k
Ω
]
20
18
16
14
12
10
8
6
4
2
0
1E-2
Fig. 6:
Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
dV/dt[Rgk] / dV/dt[Rgk = 1k
Ω
]
10.0
1.0
Rgk(kΩ)
1E-1
1E+0
1E+1
0.1
0
0.2
0.4
0.6
0.8
Rgk(kΩ)
1.0
1.2
1.4
1.6
1.8
2.0
资料提供：可控硅在线 ½½½½：／／½½½．½½½．½½½．½½
3/5
www.kersemi.com
P0102BL
Fig. 7:
Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
dV/dt[Cgk] / dV/dt [Rgk = 1k
Ω]
VD = 0.67 x VDRM
Tj = 125°C
Rgk = 1k
Ω
Fig. 8:
Surge peak on-state current versus
number of cycles.
10
8
6
4
2
7
6
5
4
3
2
1
ITSM(A)
Number of cycles
10
100
1000
Cgk(nF)
0
0
1
2
3
4
5
6
7
0
1
Fig. 9:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM(A),I
2
t(A
2
s)
100.0
ITSM
Tj initial = 25 °C
Fig. 10:
On-state characteristics (maximum
values).
ITM(A)
1E+1
Tj max.:
Vto = 1.00 V
Rd = 1
Ω
10.0
1E+0
Tj = Tj max.
Tj = 25°C
1.0
tp(ms)
0.1
0.01
0.10
1.00
I
2
t
1E-1
VTM(V)
1E-2
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
10.00
Fig. 11:
Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35
µm).
Rth(j-a) (°C/W)
500
400
300
200
100
S (mm
2
)
0
0
10
20
30
40
50
60
70
80
90
100
4/5
资料提供：可控硅在线 ½½½½：／／½½½．½½½．½½½．½½
www.kersemi.com
P0102BL
PACKAGE MECHANICAL DATA
SOT-23 (Plastic)
E
A
DIMENSIONS
REF.
e
B
e1
D
Millimeters
Min.
Max.
Min.
Inches
Max.
S
A1
L
H
A
A1
B
c
D
e
e1
E
H
L
S
0.89
1.4
0
0.1
0.3
0.51
0.085
0.18
2.75
3.04
0.85
1.05
1.7
2.1
1.2
1.6
2.1
2.75
0.6 typ.
0.35
0.65
0.035
0.055
0
0.004
0.012
0.02
0.003
0.007
0.108
0.12
0.033
0.041
0.067
0.083
0.047
0.063
0.083
0.108
0.024 typ.
0.014
0.026
c
FOOTPRINT DIMENSIONS
(in millimeters)
SOT-23 (Plastic)
0.9
0.035
0.9
0.035
2.35
0.92
1.9
0.075
1.45
0.037
mm
inch
0.9
0.035
1.1
0.043
资料提供：可控硅在线 ½½½½：／／½½½．½½½．½½½．½½
1.1
0.043
5/5
www.kersemi.com
京公网安备 11010802033920号
EEWORLD
