FX2000A_15 datasheet, PDF - EEWORLD Datasheet

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FX2000A_15: Description20 A, 100 V, SILICON, RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size91KB，2 Pages; ManufacturerDIOTEC; Websitehttp://www.diotec.com/

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FX2000A_15 Overview

20 A, 100 V, SILICON, RECTIFIER DIODE

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FX2000A ... FX2000G

Superfast Silicon Rectifier Diodes

Superschnelle Silizium-Gleichrichterdioden

Version 2013-06-28

Nominal Current

Nennstrom

Ø 8

±0.1

20 A

50...400 V

Ø 8 x 7.5 [mm]

2.0 g

Repetitive peak reverse voltage

Periodische Spitzensperrspannung

Plastic case

Kunststoffgehäuse

Weight approx.

Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped in ammo pack

Standard Lieferform gegurtet in Ammo-Pack

62.5

±0.5

Ø 1.6

±0.05

Dimensions - Maße [mm]

Maximum ratings

Type

Typ

FX2000A

FX2000B

FX2000D

FX2000F

FX2000G

Repetitive peak reverse voltage

Periodische Spitzensperrspannung

V

RRM

[V]

50

100

200

300

400

T

A

= 50°C

f > 15 Hz

T

A

= 25°C

T

A

= 25°C

7.5

±0.1

Grenzwerte

Surge peak reverse voltage

Stoßspitzensperrspannung

V

RSM

[V]

50

100

200

300

400

I

FAV

I

FRM

I

FSM

i

2

t

T

j

T

j

T

S

20 A

1

)

130 A

1

)

650/715 A

2112 A

2

s

-50...+150°C

+200°C

-50...+175°C

Max. average forward rectified current, R-load

Dauergrenzstrom in Einwegschaltung mit R-Last

Repetitive peak forward current

Periodischer Spitzenstrom

Peak forward surge current, 50/60 Hz half sine-wave

Stoßstrom für eine 50/60 Hz Sinus-Halbwelle

Rating for fusing, t < 10 ms

Grenzlastintegral, t < 10 ms

Junction temperature – Sperrschichttemperatur

in DC forward mode – bei Gleichstrom-Durchlassbetrieb

Storage temperature – Lagerungstemperatur

1

Valid, if leads are kept at ambient temperature at a distance of 10 mm from case

Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

http://www.diotec.com/

1

FX2000A_15 Related Products

	FX2000A_15	FX2000B	FX2000D
Description	20 A, 100 V, SILICON, RECTIFIER DIODE	20 A, 100 V, SILICON, RECTIFIER DIODE	20 A, 200 V, SILICON, RECTIFIER DIODE
Is it Rohs certified?	-	conform to	conform to
package instruction	-	ROHS COMPLIANT, PLASTIC PACKAGE-2	ROHS COMPLIANT, PLASTIC PACKAGE-2
Contacts	-	2	2
Reach Compliance Code	-	compli	compli
ECCN code	-	EAR99	EAR99
application	-	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	-	ISOLATED	ISOLATED
Configuration	-	SINGLE	SINGLE
Diode component materials	-	SILICON	SILICON
Diode type	-	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	-	0.82 V	0.82 V
JESD-30 code	-	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	-	390 A	390 A
Number of components	-	1	1
Phase	-	1	1
Number of terminals	-	2	2
Maximum operating temperature	-	150 °C	150 °C
Minimum operating temperature	-	-50 °C	-50 °C
Maximum output current	-	20 A	20 A
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	ROUND	ROUND
Package form	-	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED
Certification status	-	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	-	100 V	200 V
Maximum reverse recovery time	-	0.2 µs	0.2 µs
surface mount	-	NO	NO
Terminal form	-	WIRE	WIRE
Terminal location	-	AXIAL	AXIAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED

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