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5KP8.0A

Description
5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size670KB,4 Pages
ManufacturerSHUNYE
Websitehttp://www.shunyegroup.com.cn/
Download Datasheet View All

5KP8.0A Overview

5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

5KP5.0 THRU 5KP110A
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage:5.0-110
Volts
Peak Pulse Power:5000
Watts
R-6
FEATURE
1.0 (25.4)
MIN.
0.360(9.1)
0.340(8.6)
DIA.
0.360(9.5)
0.340(8.6)
5000w peak pulse power capability
Excellent clamping capability
Low incremental surge resistance
Fast response time:typically less than 1.0ps from 0v to
V
BR
for unidirectional and 5.0ns ror bidirectional types.
High temperature soldering guaranteed:
265 C/10S/9.5mm lead length at 5 lbs tension
MECHANICAL DATA
1.0 (25.4)
MIN.
0.052(1.3)
0.048(1.2)
DIA.
Dimensions in inches and (millimeters)
Available in unidirectional only
Case:
R-6 molded plastic body over
passivated junction
Terminals:
Plated axial leads, solderable per MIL-STD 750
method 2026
Polarity:
Color band denotes cathode except for
bidirectional types
Mounting Position:
Any
Weight:
0.072 ounce,2.05 grams
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
SYMBOLS
Peak power dissipation
Peak pulse reverse current
(Note 1)
(Note 1, Fig.3)
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
T
STG
,T
J
VALUE
Minimum 5000
See Table 1
8.0
400
3.5
-55 to + 175
UNITS
Watts
Amps
Watts
Amps
Volts
C
Steady state power dissapation (Note 2)
Peak forward surge current
(Note 3)
Maximum instantaneous forward voltage at 100A
for unidirectional only
(Note 3)
Operating junction and storage temperature range
Note:
1.10/1000ms
waveform non-repetitive current pulse,per Fig.3 and derated above Ta=25 C per Fig.2
2.T
L
=75 C,lead lengths 9.5mm,Mounted on copper pad atea of (20x20mm)Fig.5
3.Measured
on 8.3ms single half sine-wave or equivalent square wave,duty cycle=4 pulses per minute maximum.
www.shunyegroup.com.cn
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