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1N5408G

Description
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27
Categorysemiconductor    Discrete semiconductor   
File Size960KB,2 Pages
ManufacturerSHUNYE
Websitehttp://www.shunyegroup.com.cn/
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1N5408G Overview

3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27

1N5408G Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateCONSULT MFR
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current200 A
Reverse Voltage - 50 to 1000 Volts
DO-201AD
GLASS PASSIVATED SILICON RECTIFIER
FEATURES
1N5400G THRU 1N5408G
Forward Current - 3.0 Amperes
1.0 (25.4)
MIN.
0.220 (5.6)
0.197(5.0)
DIA.
0.375(9.5)
0.285(7.2)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
1.0 (25.4)
MIN.
0.052 (1.3)
0.048 (1.2)
DIA.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.04
ounce, 1.10 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G 5408G
1N
1N
1N
1N
1N
1N
1N
1N
1N
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
50
35
50
100 200 300 400 500 600 800 1000 VOLTS
70 140 210 280 350 420 560 700 VOLTS
100 200 300 400 500 600 800 1000 VOLTS
3.0
200
1.2
5.0
100
30.0
20.0
-65 to +175
Amps
Amps
Volts
µ
A
pF
C/W
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com.cn

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Description 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE

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