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SUF30G

Description
3 A, 400 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size54KB,2 Pages
ManufacturerSHUNYE
Websitehttp://www.shunyegroup.com.cn/
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SUF30G Overview

3 A, 400 V, SILICON, RECTIFIER DIODE

SUF30G AND SUF30J
ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage -
400 and 600 Volts
Case Style P600
Forward Current -
3.0 Amperes
FEATURES
1.0 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
0.360 (9.1)
0.340 (8.6)
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated chip junction
Utrafast recovery times for high
efficiency
High forward surge current capability
Low leakage current
Low power loss
High temperature soldering guaranteed:
260°C/10 seconds at 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
0.052 (1.32)
0.048 (1.22)
DIA.
MECHANICAL DATA
1.0 (25.4)
MIN.
Case:
Molded epoxy body over passivated chip
Terminals:
Plated axial leads solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.07 ounces, 2.1 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Ratings at 25 C ambient temperature unless otherwise specified.
SYMBOLS
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SUF30G
SUF30J
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current,
0.200” (5.0mm) lead length at T
A
=60°C
Peak forward surge current, 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method) at T
A
=60°C
Maximum instantaneous forward voltage at 3.0A
Maximum peak reverse current
at rated peak reverse voltage
Maximum reverse recovery time
(NOTE1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
Operating junction and storage temperature range
T
A
=25°C
T
A
=100°C
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
ΘJA
T
J
,T
STG
400
280
400
3.0
80.0
1.80
10.0
100.0
35.0
60
25.0
-55 to +150
600
420
600
Volts
Volts
Volts
Amps
Amps
2.0
Volts
µA
ns
pF
°C/W
°C
NOTES:
(1) Reverse recovery test condition: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.200" (5.0mm) lead length with both leads attached to heat sink
www.shunyegroup.com.cn

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SUF30G SUF30J
Description 3 A, 400 V, SILICON, RECTIFIER DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE
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