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1N4002

Description
1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size160KB,2 Pages
ManufacturerSHUNYE
Websitehttp://www.shunyegroup.com.cn/
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1N4002 Overview

1 A, 100 V, SILICON, SIGNAL DIODE, DO-41

1N4002 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateTRANSFERRED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin lead
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time2 us
Maximum repetitive peak reverse voltage100 V
Maximum average forward current1 A
1N4001 THRU 1N4007
GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage -
50 to 1000 Volts
DO-41
Forward Current -
1.0 Ampere
FEATURES
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160(4.1)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
1.0 (25.4)
MIN.
0.028 (0.7)
DIA.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-41 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.012
ounce, 0.33 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
1N
4001
1N
4002
1N
4003
1N
4004
1N
4005
1N
4006
1N
4007
UNITS
VOLTS
VOLTS
VOLTS
Amp
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
C
J
R
q
JA
T
J
,
T
STG
30.0
1.1
5.0
50.0
15.0
50.0
-65 to +175
Amps
Volts
u
A
pF
C/W
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com.cn

1N4002 Related Products

1N4002 1N4003 1N4004 1N4006 1N4007 1N4008
Description 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE
Number of terminals 2 2 2 2 2 2
Number of components 1 1 1 1 1 1
state TRANSFERRED TRANSFERRED ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape round round round ROUND round round
Package Size LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Terminal form Wire Wire Wire WIRE Wire Wire
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Packaging Materials Plastic/Epoxy Glass UNSPECIFIED PLASTIC/EPOXY Plastic/Epoxy UNSPECIFIED
structure single single single SINGLE single single
Shell connection isolation isolation isolation ISOLATED isolation isolation
Diode component materials silicon silicon silicon SILICON silicon silicon
Diode type Signal diode Signal diode Signal diode SIGNAL DIODE Signal diode Signal diode
Maximum average forward current 1 A 1 A 1 A 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 100 V - 400 V 800 V 1000 V -
Processing package description - ALF-2, DO-41, 2 PIN CASE R-1, 2 PIN ROHS COMPLIANT, PLASTIC, DO-204AL, 2 PIN PLASTIC PACKAGE-2 MINIATURE PACKAGE-2
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