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BA157G

Description
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size945KB,2 Pages
ManufacturerSHUNYE
Websitehttp://www.shunyegroup.com.cn/
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BA157G Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-41

Reverse Voltage - 400 to 1000 Volts
DO-41
FAST RECOVERY GLASS PASSIVATED RECTIFIERS
FEATURES
BA157G THRU BA159G
Forward Current - 1.0 Ampere
1.0 (25.4)
MIN.
0.107(2.7)
0.080(2.0)
DIA.
0.205(5.2)
0.166(4.2)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
1.0 (25.4)
MIN.
0.034(0.86)
0.028(0.70)
DIA.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-41 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.012
ounce, 0.33 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
BA157G
BA158G
BA159G
UNITS
VOLTS
VOLTS
VOLTS
Amp
Amps
Volts
µ
A
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
T
A
=25 C
Maximum DC reverse current
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
,
T
STG
400
280
400
600
420
600
1.0
30.0
1.3
5.0
50.0
1000
700
1000
150
250
15.0
50.0
-65 to +150
500
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com.cn

BA157G Related Products

BA157G BA158G BA159G
Description 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

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