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BUK7515-100A

Description
TrenchMOS transistor Standard level FET
CategoryDiscrete semiconductor    The transistor   
File Size46KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BUK7515-100A Overview

TrenchMOS transistor Standard level FET

BUK7515-100A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)75 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)230 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope using
’trench’ technology which features
very low on-state resistance. It is
intended for use in automotive and
general
purpose
switching
applications.
BUK7515-100A
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 10 V
MAX.
100
75
230
175
15
UNIT
V
A
W
˚C
mΩ
PINNING - TO220AB
PIN
1
2
3
tab
gate
drain
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g
source
drain
1 23
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
20
75
53
240
230
175
UNIT
V
V
V
A
A
A
W
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
TYP.
-
60
MAX.
0.65
-
UNIT
K/W
K/W
December 1998
1
Rev 1.100
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