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BUK856-800

Description
Insulated Gate Bipolar Transistor IGBT
File Size45KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet View All

BUK856-800 Overview

Insulated Gate Bipolar Transistor IGBT

Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK856-800A
GENERAL DESCRIPTION
Fast-switching N-channel insulated
gate bipolar power transistor in a
plastic envelope.
The device is intended for use in
motor control, DC/DC and AC/DC
converters, and in general purpose
high frequency switching
applications.
QUICK REFERENCE DATA
SYMBOL
V
CE
I
C
P
tot
V
CEsat
E
off
PARAMETER
Collector-emitter voltage
Collector current (DC)
Total power dissipation
Collector-emitter on-state voltage
Turn-off energy Loss
MAX.
800
24
125
3.5
1.0
UNIT
V
A
W
V
mJ
PINNING - TO220AB
PIN
1
2
3
tab
gate
collector
emitter
collector
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c
g
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
CE
V
CGR
±V
GE
I
C
I
C
I
CLM
I
CM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage
Collector-gate voltage
Gate-emitter voltage
Collector current (DC)
Collector current (DC)
Collector Current (Clamped
Inductive Load)
Collector current (pulsed peak value,
on-state)
Total power dissipation
Storage temperature
Junction Temperature
CONDITIONS
-
R
GE
= 20 kΩ
-
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
j
T
jmax.
V
CL
500 V
T
j
T
jmax.
T
mb
= 25 ˚C
-
-
MIN.
-5
-
-
-
-
-
-
-
- 55
-
MAX.
800
800
30
24
12
40
50
125
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
In free air
TYP.
-
60
MAX.
1.0
-
UNIT
K/W
K/W
March 1993
1
Rev 1.000
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