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MADP-042XX8-13060_15

Description
SILICON, PIN DIODE
Categorysemiconductor    Discrete semiconductor   
File Size654KB,5 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
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MADP-042XX8-13060_15 Overview

SILICON, PIN DIODE

MADP-042XX8-13060 Series
SURMOUNT
TM
8µM PIN Diodes
RoHS Compliant
Features
Surface Mount
No Wirebonds Required
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polymer Scratch Protection
Low Parasitic Capacitance and Inductance
High Average and Peak Power Handling
RoHS Compliant
Rev. V2
Description
This device is a silicon, glass PIN diode surmount chip
fabricated with M/A-COM Technology Solutions’ patented
HMIC
TM
process. This device features two silicon
pedestals embedded in a low loss, low dispersion glass.
The diode is formed on the top of one pedestal and
connections to the backside of the device are facilitated by
making the pedestal sidewalls electrically conductive.
Selective backside metallization is applied producing a
surface mount device. This vertical topology provides for
exceptional heat transfer. The topside is fully
encapsulated with silicon nitride and has an additional
polymer layer for scratch and impact protection. These
protective coatings prevent damage to the junction and the
anode air-bridge during handling and assembly.
Applications
These packageless devices are suitable for moderate
incident power applications, ≤ 10W/C.W. or where the
peak power is ≤ 52W, pulse width is ≤ 1μS, and duty cycle
is ≤ 0.01%. Their low parasitic inductance, 0.4 nH, and
excellent RC constant
,
make these devices a superior
choice for higher frequency switch elements when
compared to their plastic package counterparts.
DIM
A
B
C
D
E
G
D
E
F
INCHES
MIN.
0.040
0.021
0.004
0.013
0.011
0.013
0.019
MM
MIN.
1.025
0.525
0.102
0.325
0.275
0.325
0.475
MAX.
0.042
0.023
0.008
0.015
0.013
0.015
0.021
MAX.
1.075
0.575
0.203
0.375
0.325
0.375
0.525
Absolute Maximum Ratings
1
@ T
AMB
= +25°C
(unless otherwise specified)
Parameter
MADP-042…-13060
C.W. Incident Power dBm
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Junction Temperature
Mounting Temperature
F
G
Absolute Maximum
308
+42
Notes:
908
+39
1. Backside metal: 0.1
μM
thick.
2. Yellow hatched areas indicate backside ohmic gold contacts.
3. All devices have the same outline dimensions ( A to G).
408
+44
508
+43
250 mA
-100 V
-55°C to +125°C
-55°C to +150°C
+175°C
+280°C for 10 seconds
1. Exceeding these limits may cause permanent damage.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

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