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BUL147F

Description
POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS
CategoryDiscrete semiconductor    The transistor   
File Size213KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BUL147F Overview

POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS

BUL147F Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresUL RECOGNIZED
Shell connectionISOLATED
Maximum collector current (IC)8 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Polarity/channel typeNPN
Maximum power dissipation(Abs)45 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)14 MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL147/D
Data Sheet
SWITCHMODE
Designer's
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The BUL147/BUL147F have an applications specific state–of–the–art die designed
for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power
supplies for all types of electronic equipment. These high–voltage/high–speed
transistors offer the following:
Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Parametric Distributions are Tight and Consistent Lot–to–Lot
Two Package Choices: Standard TO–220 or Isolated TO–220
BUL147F, Isolated Case 221D, is UL Recognized to 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current — Continuous
— Peak(1)
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
TC = 25°C)
Total Device Dissipation
Derate above 25°C
Test No. 1 Per Fig. 22a
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
(TC = 25°C)
Symbol
VCEO
VCES
VEBO
IC
ICM
IB
IBM
VISOL
BUL147
BUL147F
400
700
9.0
8.0
16
4.0
8.0
125
1.0
4500
3500
1500
45
0.36
Unit
Vdc
Vdc
Vdc
Adc
Adc
Volts
BUL147*
BUL147F*
*Motorola Preferred Device
POWER TRANSISTOR
8.0 AMPERES
700 VOLTS
45 and 125 WATTS
BUL147
CASE 221A–06
TO–220AB
PD
TJ, Tstg
Watts
W/°C
°C
Operating and Storage Temperature
– 65 to 150
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
Symbol
R
θJC
R
θJA
TL
BUL44
1.0
62.5
260
BUL44F
2.78
62.5
Unit
°C/W
°C
BUL147F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
Collector Cutoff Current
(VCE = 500 V, VEB = 0)
(TC = 125°C)
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
10%.
(2) Proper strike and creepage distance must be provided.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Symbol
Min
Typ
Max
Unit
VCEO(sus)
ICEO
ICES
400
100
100
500
100
100
Vdc
µAdc
µAdc
IEBO
µAdc
(continued)
REV 1
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
3–1

BUL147F Related Products

BUL147F
Description POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS
Is it Rohs certified? incompatible
Maker ON Semiconductor
Parts packaging code SFM
package instruction FLANGE MOUNT, R-PSFM-T3
Contacts 3
Reach Compliance Code _compli
ECCN code EAR99
Other features UL RECOGNIZED
Shell connection ISOLATED
Maximum collector current (IC) 8 A
Collector-emitter maximum voltage 400 V
Configuration SINGLE
Minimum DC current gain (hFE) 8
JESD-30 code R-PSFM-T3
JESD-609 code e0
Number of components 1
Number of terminals 3
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) 225
Polarity/channel type NPN
Maximum power dissipation(Abs) 45 W
Certification status Not Qualified
surface mount NO
Terminal surface Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE
Terminal location SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 14 MHz
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