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GBJ1506

Description
3.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size903KB,2 Pages
ManufacturerChenda
Websitehttp://www.szchenda.com
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GBJ1506 Overview

3.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

GBJ15005 THRU GBJ1510
SILICON BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts
? .134(3.4)
? .122(3.1)
Forward Current - 15.0 Amperes
GBJ
1.193(30.3)
1.169(29.7)
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
.198 MAX
(5.1)
.800(20.3)
.776(19.7)
? .134(3.4)
? .122(3.1)
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop,high current capability
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
The plastic material has U/L flammability
.118(3.0)*45°
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
.165(4.2)
.142(3.6)
.708(18.0)
.669(17.0)
.106(2.7)
.096(2.3)
+
~ ~ _
.441(11.2)
.425(10.8)
.114(2.9)
.098(2.5)
classification 94V-0
.402(10.2) .303(7.7).303(7.7)
SPACING
.386(9.8) .287(7.3).287(7.3)
.031(0.8)
.023(0.6)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current @ T
C
=100℃ (without heatsink)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage drop
per birdge element at 7.5A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=125 C
SYMBOLS
GBJ
15005
GBJ
1501
GBJ
1502
GBJ
1504
GBJ
1506
GBJ
1508
GBJ
1510
UNITS
VOLTS
VOLTS
VOLTS
Amps
Amps
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
15.0
3.7
240
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
1.0
10
0.5
240
60
0.8
-55 to +150
-55 to +150
Volts
µ
A
mA
It Rating for Fusing (t<8.3ms)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating junction temperature range
storage temperature range
I
2
t
C
J
R
θ
JC
T
J
T
STG
A
2
s
pF
C/W
C
C
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 75mm*75mm*1.6mm Cu plate heatsink.
3.The typical data above is for reference only(典型值仅供参考).

GBJ1506 Related Products

GBJ1506 GBJ15005 GBJ1501 GBJ1502 GBJ1504 GBJ1508 GBJ1510
Description 3.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 15 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
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