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MBR1045CT

Description
10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size632KB,2 Pages
ManufacturerChenda
Websitehttp://www.szchenda.com
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MBR1045CT Overview

10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB

MBR1045CT Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionPLASTIC PACKAGE-3
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structureCOMMON CATHODE, 2 ELEMENTS
Shell connectionCATHODE
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum repetitive peak reverse voltage45 V
Maximum average forward current10 A
Maximum non-repetitive peak forward current125 A
MBR1020CT THRU MBR10100CT
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 Volts
TO-220AB
0.415(10.54)
MAX
0.154(3.91)
DIA
0.148(3.74)
0.185(4.70)
0.175(4.44)
0.057(1.45)
0.051(1.30)
0.113(2.87)
0.103(2.62)
0.145(3.68)
0.135(3.43)
0.410(10.41)
0.390(9.91)
PIN
1
2
3
0.160 (4.05)
0.140 (3.55)
0.635(16.13)
0.625(15.87)
0.350(8.89)
0.330(8.38)
1.148(29.16)
1.118(28.40)
0.590(14.22)
0.530(13.46)
0.037(0.94)
0.027(0.68)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.560(14.2)
0.530(13.4)
Forward Current -10.0 Amperes
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C,0.25
(6.35mm) from case for 10 seconds
0.110(2.79)
0.100(2.54)
MECHANICAL DATA
0.022(0.58)
0.014(0.35)
0.105 (2.67)
0.095 (2.41)
PIN 1
PIN 3
PIN 2
CASE
Dimensions in inches and (millimeters)
Case:
TO-220AB molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:0.080
ounce, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 5.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
MBR MBR MBR
MBR MBR MBR MBR MBR MBR MBR
1020CT 1030CT 1040CT 1045CT 1050CT 1060CT 1070CT 1080CT 1090CT 10100CT
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
45
32
45
50
35
50
60
42
60
10.0
70
49
70
80
56
80
90
63
90
100
70
100
I
FSM
V
F
I
R
C
J
R
θ
JC
T
J
T
STG
0.55
15.0
550
150.0
0.75
1.0
50.0
450
2.0
-50 to +125
-50 to +150
-50 to +150
0.85
Amps
Volts
mA
pF
C/W
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to case

MBR1045CT Related Products

MBR1045CT MBR10100CT MBR1020CT MBR1030CT MBR1040CT MBR1050CT MBR1060CT MBR1080CT MBR1090CT
Description 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB RECTIFIER DIODES,COMMON CATHODE,SCHOTTKY,60V V(RRM),TO-220AB 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB

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Index Files: 757  2431  249  1932  1055  16  49  5  39  22 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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