BUL45F datasheet, PDF - EEWORLD Datasheet

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BUL45F: DescriptionPOWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS; CategoryDiscrete semiconductor The transistor; File Size221KB，10 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BUL45F Overview

POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

BUL45F Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
Parts packaging code	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
Shell connection	ISOLATED
Maximum collector current (IC)	5 A
Collector-based maximum capacity	75 pF
Collector-emitter maximum voltage	400 V
Configuration	SINGLE
Minimum DC current gain (hFE)	7
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	35 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	12 MHz
Maximum off time (toff)	3500 ns
Maximum opening time (tons)	110 ns
VCEsat-Max	0.4 V

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BUL45/D

Designer's

NPN Silicon Power Transistor

High Voltage SWITCHMODE

™

Data Sheet

BUL45 *

BUL45F*

*Motorola Preferred Device

Series

Designed for use in electronic ballast (light ballast) and in Switchmode Power

supplies up to 50 Watts. Main features include:

•

Improved Efficiency Due to:

— Low Base Drive Requirements (High and Flat DC Current Gain hFE)

— Low Power Losses (On–State and Switching Operations)

— Fast Switching: tfi = 100 ns (typ) and tsi = 3.2

µs

(typ)

— Fast Switching:

@ IC = 2.0 A, IB1 = IB2 = 0.4 A

•

Full Characterization at 125°C

•

Tight Parametric Distributions Consistent Lot–to–Lot

•

BUL45F, Case 221D, is UL Recognized at 3500 VRMS: File #E69369

MAXIMUM RATINGS

Rating

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

Collector Current — Continuous

— Peak(1)

Base Current

RMS Isolated Voltage(2)

(for 1 sec, R.H. < 30%,

TC = 25°C)

Total Device Dissipation

Derate above 25°C

Operating and Storage Temperature

Test No. 1 Per Fig. 22a

Test No. 2 Per Fig. 22b

Test No. 3 Per Fig. 22c

(TC = 25°C)

Symbol

VCEO

VCES

VEBO

ICM

VISOL

—

0.6

BUL45

400

700

9.0

5.0

2.0

4500

3500

1500

0.28

BUL45F

Unit

Vdc

Adc

Volts

POWER TRANSISTOR

5.0 AMPERES

700 VOLTS

35 and 75 WATTS

BUL45

CASE 221A–06

TO–220AB

TJ, Tstg

Watts

W/°C

°C

BUL45F

CASE 221D–02

ISOLATED TO–220 TYPE

UL RECOGNIZED

– 65 to 150

THERMAL CHARACTERISTICS

Rating

Thermal Resistance — Junction to Case

— Junction to Ambient

Symbol

θJC

θJA

MJE18006 MJF18006

1.65

62.5

3.55

62.5

Unit

°C/W

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)

Collector Cutoff Current (VCE = Rated VCEO, IB = 0)

Collector Cutoff Current (VCE = Rated VCES, VEB = 0)

(TC = 125°C)

Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

≤

10%.

(2) Proper strike and creepage distance must be provided.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions

— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred

devices are Motorola recommended choices for future use and best overall value.

Symbol

Min

Typ

Max

Unit

VCEO(sus)

ICEO

ICES

IEBO

400

—

100

Vdc

µAdc

(continued)

REV 2

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

BUL45F Related Products

	BUL45F	BUL45
Description	POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS	POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
Maker	Motorola ( NXP )	Motorola ( NXP )
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow	unknow
Shell connection	ISOLATED	COLLECTOR
Maximum collector current (IC)	5 A	5 A
Collector-based maximum capacity	75 pF	75 pF
Collector-emitter maximum voltage	400 V	400 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	7	7
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN
Maximum power consumption environment	35 W	75 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	12 MHz	12 MHz
Maximum off time (toff)	3500 ns	3500 ns
Maximum opening time (tons)	110 ns	110 ns
VCEsat-Max	0.4 V	0.4 V

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