LAB
MECHANICAL DATA
Dimensions in mm
10.2
SEME
BUL52AFI
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
3.6 Dia.
6.3
15.1
Designed for use in
electronic ballast applications
•
•
•
•
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
1 2 3
1.3
14.0
0.85
FEATURES
2.54 2.54
ISOLATED TO220
Pin 1 – Base
Pin 2 – Collectorn
Pin3 – Emitter
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
T
stg
Semelab plc.
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
1000V
500V
10V
6A
10A
2.5A
45W
–55 to 150°C
Prelim. 3/97
LAB
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
SEME
BUL52AFI
Test Conditions
Min.
500
1000
10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
Collector – Emitter Sustaining Voltage I
C
= 10mA
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut–Off Current
Collector – Emitter Cut–Off Current
Emitter Cut–Off Current
I
C
= 1mA
I
E
= 1mA
V
CB
= 1000V
T
C
= 125°C
I
B
= 0
V
EB
= 9V
I
C
= 0
I
C
= 0.1A
I
C
= 1A
I
C
= 2.5A
I
C
= 100mA
T
C
= 125°C
V
CE
= 5V
V
CE
= 5V
V
CE
= 1V
T
C
= 125°C
I
B
= 20mA
I
B
= 0.5A
I
B
= 0.5A
I
B
= 0.2A
I
B
= 0.5A
V
CE
= 4V
f = 1MHz
V
CE
= 500V
V
10
100
100
10
100
µA
µA
µA
18
12
5
30
15
9
0.05
0.1
0.3
0.8
0.9
20
45
0.1
0.2
0.8
1.0
1.2
V
V
—
h
FE*
DC Current Gain
V
CE(sat)*
Collector – Emitter Saturation Voltage I
C
= 1A
I
C
= 2.5A
I
C
= 1A
I
C
= 2.5A
I
C
= 0.2A
V
CB
= 20V
V
BE(sat)*
Base – Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Transition Frequency
Output Capacitance
f
t
C
ob
MHz
pF
* Pulse test t
p
= 300µs ,
δ
< 2%
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/97
LAB
SEME
BUL52AFI
DC Current Gain
Collector-Emitter Saturation Voltage
Forward Bias Safe Operating Area
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/97
LAB
SEME
BUL52AFI
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/97
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