®
BUL57
BUL57FP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s
s
s
s
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPES
NPN TRANSISTORS
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125
o
C
LARGE RBSOA
TO-220FP FULLY ISOLATED PACKAGE
(U.L. COMPLIANT)
1
2
3
1
2
3
TO-220
TO-220FP
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The devices are manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
They use a Cellular Emitter structure with planar
edge termination to enhance switching speeds.
The devices are designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
t ot
T
stg
T
j
Parameter
BUL57
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
o
Total Dissipation at T
c
= 25 C
St orage Temperature
Max. Operating Junction Temperature
700
400
9
8
16
4
7
85
-65 to 150
150
35
Value
BUL57FP
V
V
V
A
A
A
A
W
o
C
o
C
1/7
Uni t
January 1999
BUL57 / BUL57FP
THERMAL DATA
TO-220
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
1.47
62.5
TO-220F P
3.5
62.5
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CES
I
CEO
V
CEO(sus)
V
EBO
V
CE(sat )
∗
Parameter
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
Collector-Emitter
Sustaining Voltage
Emitter-Base Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Test Cond ition s
V
CE
= 700 V
V
CE
= 700 V
V
EC
= 400 V
I
C
= 100 mA
I
E
= 10 mA
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
2
3
4
5
8
A
A
A
A
A
I
B
I
B
I
B
I
B
I
B
=
=
=
=
=
0.4 A
0.6 A
0.8 A
1 A
2 A
L = 25 mH
400
9
0.65
0.75
1.2
2
2
1.2
1.6
15
6
8
1.8
60
2.6
110
1
54
1.5
90
1.6
100
40
T
j
= 125 C
o
Min.
Typ .
Max.
100
500
250
Un it
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
BE(s at)
∗
h
F E
∗
Base-Emitt er
Saturation Voltage
DC Current Gain
I
C
= 2 A
I
C
= 5 A
I
C
= 2 A
I
C
= 4 A
I
C
= 10 mA
I
C
= 3 A
I
B1
= 0.6 A
L = 200
µH
I
C
= 3 A
I
B1
= 0.6 A
L = 200
µH
I
B
= 0.4 A
I
B
= 1 A
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
V
CL
= 250 V
I
B2
= -1.2 A
V
CL
= 250 V
I
B2
= -1.2 A
o
T
j
= 125 C
I
B1
= 0.6 A
R
BB
= 0
Ω
L = 200
µH
I
B1
= 0.6 A
R
BB
= 0
Ω
L = 200
µH
I
C
= 2 A
I
B2
= -0.4 A
t
s
t
f
t
s
t
f
t
s
t
f
t
s
t
f
INDUCTIVE LO AD
Storage Time
Fall Time
INDUCTIVE LO AD
Storage Time
Fall Time
INDUCTIVE LO AD
Storage Time
Fall Time
INDUCTIVE LO AD
Storage Time
Fall Time
RESISTIVE LO AD
Storage Time
Fall Time
2.6
110
µs
ns
µs
ns
µs
ns
µs
ns
I
C
= 3 A
V
BE(of f)
= -5 V
V
CL
= 250 V
I
C
= 3 A
V
BE(of f)
= -5V
V
CL
= 250 V
o
T
j
= 125 C
V
CC
= 300 V
I
B1
= 0.4 A
Tp = 30
µs
t
s
t
f
3
4.2
350
ms
ns
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
2/7
BUL57 / BUL57FP
Inductive Fall Time
Inductive Storage Time
Resistive Fall Time
Resistive Load Storage Time
Reverse Biased SOA
RBSOA and Inductive Load Switching Test
Circuit
1) Fast electronic switc h
2) Non-inductive Resistor
3) Fast recovery Rect ifier
4/7
Microcontroller MCU
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