SKiiP 35ACC12T4V10
Absolute Maximum Ratings
Symbol
IGBT 1 - 6
V
CES
I
C
I
C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 175 °C
I
CRM
= 3 x I
Cnom
V
CC
= 800 V
V
GE
≤
15 V
V
CES
≤
1200 V
T
s
= 25 °C
T
s
= 70 °C
T
s
= 25 °C
T
s
= 70 °C
1200
62
47
69
56
50
150
-20 ... 20
T
j
= 150 °C
10
-40 ... 175
1200
T
s
= 25 °C
T
s
= 70 °C
T
s
= 25 °C
T
s
= 70 °C
62
47
69
56
50
I
CRM
= 3 x I
Cnom
V
CC
= 800 V
V
GE
≤
15 V
V
CES
≤
1200 V
150
-20 ... 20
T
j
= 150 °C
10
-40 ... 175
1200
T
s
= 25 °C
T
s
= 70 °C
T
s
= 25 °C
T
s
= 70 °C
52
39
60
48
50
I
FRM
= 3xI
Fnom
10 ms, sin 180°, T
j
= 150 °C
150
270
-40 ... 175
T
j
= 25 °C
T
j
= 150 °C
T
j
= 175 °C
I
FRM
= 3 x I
Fnom
10 ms, sin 180°, T
j
= 150 °C
T
s
= 25 °C
T
s
= 70 °C
T
s
= 25 °C
T
s
= 70 °C
1200
54
41
60
48
50
150
270
-40 ... 175
20 A per spring
AC sinus 50 Hz, 1 min
60
-40 ... 125
2500
V
A
A
A
A
A
A
V
µs
°C
V
A
A
A
A
A
A
V
µs
°C
V
A
A
A
A
A
A
A
°C
V
A
A
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
MiniSKiiP 3
Twin 6-pack
SKiiP 35ACC12T4V10
Target Data
Features
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
®
I
Cnom
I
CRM
V
GES
t
psc
T
j
V
CES
I
C
I
C
I
Cnom
I
CRM
V
GES
t
psc
T
j
Diode 1 - 6
V
RRM
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
j
Diode 7 - 12
V
RRM
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
T
j
= 25 °C
T
j
= 150 °C
T
j
= 175 °C
IGBT 7 - 12
T
j
= 25 °C
T
j
= 150 °C
T
j
= 175 °C
Typical Applications*
• 4Q inverters
• Double axis inverters
Remarks
• Max. case temperature limited to T
C
=
125°C
• Product reliability results valid for
T
j
≤150°C
(recommended
T
j,op
=-40...+150°C)
ACC
© by SEMIKRON
Rev. 0.1 – 12.05.2015
1
SKiiP 35ACC12T4V10
Characteristics
Symbol
IGBT 1 - 6
V
CE(sat)
V
CE0
r
CE
Conditions
I
C
= 50 A
V
GE
= 15 V
chiplevel
chiplevel
V
GE
= 15 V
chiplevel
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 600 V
I
C
= 50 A
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
V
GE
= +15/-15 V
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
min.
typ.
1.85
2.25
0.8
0.7
21
31
max.
2.10
2.40
0.9
0.8
24
32
6.5
0.3
Unit
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
MiniSKiiP
®
3
Twin 6-pack
SKiiP 35ACC12T4V10
Target Data
Features
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
V
GE
= V
CE
V, I
C
= 1.7 mA
T
j
= 25 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
5
5.8
0.1
2.77
0.21
0.16
280
4
Typical Applications*
• 4Q inverters
• Double axis inverters
per IGBT,
λ
paste
=0.8 W/K*m
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
5
T
j
= 25 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
0.71
1.85
2.20
0.80
0.70
21
30
5.8
2.10
2.40
0.90
0.80
24
32
6.5
K/W
V
V
V
V
mΩ
mΩ
V
mA
mA
Remarks
• Max. case temperature limited to T
C
=
125°C
• Product reliability results valid for
T
j
≤150°C
(recommended
T
j,op
=-40...+150°C)
IGBT 7 - 12
I
C
= 50 A
V
CE(sat)
V
GE
= 15 V
chiplevel
V
CE0
chiplevel
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
V
GE
= +15/-15 V
V
GE
= 15 V
chiplevel
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 600 V
I
C
= 50 A
V
GE
= V
CE
V, I
C
= 1.7 mA
2.77
0.21
0.16
280
4
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
0.71
per IGBT,
λ
paste
=0.8 W/K*m
K/W
ACC
2
Rev. 0.1 – 12.05.2015
© by SEMIKRON
SKiiP 35ACC12T4V10
Characteristics
Symbol
Diode 1 - 6
V
F
= V
EC
V
F0
r
F
Conditions
I
F
= 50 A
V
GE
= 0 V
chiplevel
chiplevel
chiplevel
I
F
= 50 A
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
min.
typ.
2.2
2.2
1.3
0.9
18
26
max.
2.7
2.5
1.5
1.1
25
28
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
MiniSKiiP
®
3
Twin 6-pack
SKiiP 35ACC12T4V10
Target Data
Features
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
I
RRM
Q
rr
E
rr
R
th(j-s)
T
j
= 150 °C
V
GE
= -15 V
T
j
= 150 °C
V
R
= 600 V
per Diode,
λ
paste
=0.8 W/K*m
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
0.95
2.2
2.2
1.3
0.9
18
26
2.5
2.5
1.5
1.1
21
28
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
Diode 7 - 12
V
F
= V
EC
I
F
= 50 A
V
GE
= 0 V
chiplevel
V
F0
chiplevel
r
F
I
RRM
Q
rr
E
rr
R
th(j-s)
Module
M
s
w
Temperature Sensor
R
100
R(T)
to heat sink
chiplevel
I
F
= 50 A
Typical Applications*
• 4Q inverters
• Double axis inverters
T
j
= 150 °C
V
GE
= -15 V
T
j
= 150 °C
V
CC
= 600 V
per Diode,
λ
paste
=0.8 W/K*m
2
0.95
2.5
82
K/W
Nm
g
Remarks
• Max. case temperature limited to T
C
=
125°C
• Product reliability results valid for
T
j
≤150°C
(recommended
T
j,op
=-40...+150°C)
T
r
=100°C (R
25
=1000Ω)
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)
2
], A = 7.635*10
-3
°C
-1
,
B = 1.731*10
-5
°C
-2
1670 ±
3%
Ω
ACC
© by SEMIKRON
Rev. 0.1 – 12.05.2015
3
SKiiP 35ACC12T4V10
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
4
Rev. 0.1 – 12.05.2015
© by SEMIKRON
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