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BUP313

Description
32 A, 1200 V, N-CHANNEL IGBT, TO-218
CategoryDiscrete semiconductor    The transistor   
File Size87KB,8 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BUP313 Overview

32 A, 1200 V, N-CHANNEL IGBT, TO-218

BUP313 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Maximum collector current (IC)32 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
BUP 313
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1
G
Type
BUP 313
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
Symbol
Values
1200
1200
Unit
V
Pin 2
C
Ordering Code
Q67040-A4208-A2
Pin 3
E
V
CE
I
C
Package
TO-218 AB
1200V 32A
V
CE
V
CGR
V
GE
I
C
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
± 20
A
32
20
T
C
= 25 °C
T
C
= 90 °C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
64
40
T
C
= 25 °C
T
C
= 90 °C
Avalanche energy, single pulse
E
AS
22
mJ
I
C
= 15 A,
V
CC
= 50 V,
R
GE
= 25
L
= 200 µH,
T
j
= 25 °C
Power dissipation
P
tot
200
W
-55 ... + 150
-55 ... + 150
°C
T
C
= 25 °C
Chip or operating temperature
Storage temperature
T
j
T
stg
Semiconductor Group
1
Jul-30-1996

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BUP313 Q67040-A4208-A2
Description 32 A, 1200 V, N-CHANNEL IGBT, TO-218 32 A, 1200 V, N-CHANNEL IGBT, TO-218
Number of components 1 1
Number of terminals 3 3
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Transistor component materials SILICON SILICON
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