General Purpose Transistor
2SC3356-G Series
RoHS Device
Features
- Low noise and high gain.
- High power gain.
- Designed for low noise amplifier.
SOT-23
1 : BASE
2 : EMITTER
3 : COLLECTOR
0.122(3.10)
0.106(2.70)
Circuit Diagram
1
Base
Collector
3
3
0.059(1.50)
0.043(1.10)
1
2
Emitter
0.079(2.00)
0.071(1.80)
2
Maximum Ratings
(at TA=25°C unless otherwise noted)
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current - continuous
Collector dissipation
Junction temperature
Storage temperature
0.004(0.10)
Typ.
0.039(1.00)
Typ.
0.102(2.60)
0.087(2.20)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Value
20
12
3
100
200
150
-65~+150
Unit
V
V
V
mA
mW
°C
°C
0.016(0.40)
Typ.
0.004(0.10)
0.001(0.02)
0.019(0.48)
0.014(0.35)
Dimensions in inches and (millimeter)
Electrical Characteristics
(at T =25°C unless otherwise noted)
A
Parameter
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Insertion power gain
Feed-back capacitance
Noise Figure
Conditions
I
C
=10μA , I
E
=0
I
C
=1mA , I
B
=0
I
E
=10μA , I
C
=0
V
CB
=10V , I
E
=0
V
EB
=1V , I
C
=0
V
CE
=10V , I
C
=20mA
V
CE
=10V , I
C
=20mA
V
CE
=10V , I
C
=20mA , f=1GHZ
V
CB
=10V , I
E
=0 , f=1MHZ
V
CB
=10V , I
C
=7mA , f=1GHZ
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
f
T
|S
21e
|
Cre
NF
2
Min
20
12
3
Typ
Max
Unit
V
V
V
1
µA
µA
1
50
120
7
11.5
0.55
1.1
1.0
2.0
300
GH
Z
dB
P
F
dB
Classification Of hFE
Part No.
Range
Marking
2SC3356Q-G
50-100
R23
2SC3356R-G
80-160
R24
2SC3356S-G
125-250
R25
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR48
REV: A
Page 1
Comchip Technology CO., LTD.
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (2SC3356-G)
Fig.1 - Total Power Dissipation Vs.
Ambient Temperature
250
2
Fig.2 - Feed-back Capacitance Vs.
Collector To Base Voltage
Feed-back Capacitance,
C
re
(pF)
f = 1MHz
Total Power Dissipation, (mW)
200
150
1
100
0.5
50
0
0
25
50
75
100
125
150
0.3
0.2
1
10
30
Ambient Temperature, T
A
(°C)
Collector To Base Voltage,
V
CB
(V)
Fig.3 - Dc Current Gain Vs. Collector Current
200
V
CE
=10V
Fig.4 - Insertion Gain Vs. Collector Current
15
Dc Current Gain, h
FE
100
Insertion Gain, |S
21e
| (dB)
2
10
50
5
V
CE
=10V
f = 1GHz
10
0.5
1
10
50
0
0.5
1
5
10
70
Collector Current, Ic (mA)
Collector Current, Ic (mA)
Fig.5 - Gain Bandwidth Product Vs.
Collector Current
10
25
Fig.6 - Insertion Gain, Max. Gain Vs. Frequency
Gain Bandwidth Product, f
T
(MHz)
G
max
Maximum Gain, G
max
(dB)
2
Insertion Gain, |S
21e
| (dB)
20
|S
21e
|
2
15
1
10
5
V
CE
=10V
0.1
0.1
1
10
100
0
0.05
0.1
0.5
1
2
Collector Current, Ic (mA)
Frequency
, f (GHz)
REV: A
Page 2
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR48
Comchip Technology CO., LTD.
General Purpose Transistor
Reel Taping Specification
d
F
B
P
A
E
W
P0
P1
SYMBOL
A
3.15
±
0.10
0.124
±
0.004
B
2.77
±
0.10
0.109
±
0.004
C
1.22
±
0.10
0.048
±
0.004
d
1.50
+
0.10
0.059
+
0.004
D
178
±
2.0
7.008
±
0.079
D
1
54.40
±
1.0
2.142
±
0.039
D
2
13.00
±
1.0
0.512
±
0.039
SOT-23
(mm)
(inch)
SYMBOL
E
1.75
±
0.10
0.069
±
0.004
F
3.50
±
0.10
0.138
±
0.004
P
4.00
±
0.10
0.158
±
0.004
P
0
4.00
±
0.10
0.158
±
0.004
P
1
2.00
±
0.10
W
8.00
+
0.30 /
–0.10
W
1
9.50
±
1.00
SOT-23
(mm)
(inch)
0.079
±
0.004
0.315
+
0.012 /
–0.004
0.374
±
0.039
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR48
REV: A
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Comchip Technology CO., LTD.
General Purpose Transistor
Marking Code
3
Part Number
2SC3356Q-G
2SC3356R-G
2SC3356S-G
Marking Code
R23
R24
R25
XXX
1
2
XXX = Product type marking code
Suggested PAD Layout
B
SOT-23
SIZE
(mm)
A
B
C
D
0.90
0.80
0.95
2.00
(inch)
0.035
D
0.032
0.037
0.079
C
C
A
Standard Packaging
REEL PACK
Case Type
REEL
( pcs )
Reel Size
(inch)
SOT-23
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR48
REV: A
Page 4
Comchip Technology CO., LTD.
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