AP70SL1K4AI
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
100% R
g
& UIS Test
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
3,4
700V
1.4Ω
3.2A
S
Description
AP70SL1K4A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
G
D
S
TO-220CFM(I)
.
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
dv/dt
P
D
@T
C
=25℃
P
D
@T
A
=25℃
E
AS
dv/dt
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
3,4
Drain Current, V
GS
@ 10V
3,4
Pulsed Drain Current
1
MOSFET dv/dt Ruggedness (V
DS
= 0 …400V )
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy
5
Peak Diode Recovery dv/dt
6
Storage Temperature Range
Operating Junction Temperature Range
Rating
700
+20
3.2
2.1
8.3
50
25
1.13
27
15
-55 to 150
-55 to 150
Units
V
V
A
A
A
V/ns
W
W
mJ
V/ns
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
5
65
Units
℃/W
℃/W
1
201511041
Data & specifications subject to change without notice
AP70SL1K4AI
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Limited by max. junction temperature. Maximum duty cycle D=0.75
4.Ensure that the junction temperature does not exceed T
Jmax.
.
5.Starting T
j
=25
o
C , V
DD
=50V , L=150mH , R
G
=25Ω
6.I
SD
≦
I
D
, V
DD
≦
BV
DSS
, starting T
J
= 25
o
C
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
700
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
Typ.
-
-
-
2.4
-
-
10.5
2.8
4.2
10
7
22
14
380
15
6
6
Typ.
0.8
150
520
Max. Units
-
1.4
5
-
100
+100
16.8
-
-
-
-
-
-
608
-
-
12
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=1A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
DS
=V
GS
, I
D
=250uA
V
DS
=20V, I
D
=1A
V
DS
=560V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=1.5A
V
DS
=480V
V
GS
=10V
V
DD
=400V
I
D
=1.5A
R
G
=10Ω
V
GS
=10V
V
GS
=0V
V
DS
=100V
f=1.0MHz
f=1.0MHz
Test Conditions
I
S
=1A, V
GS
=0V
I
S
=1.5, V
GS
=0V
dI/dt=50A/µs
.
Source-Drain Diode
Max. Units
-
-
-
V
ns
nC
2
AP70SL1K4AI
6
4
T
C
=25 C
5
o
10V
8.0V
7.0V
I
D
, Drain Current (A)
3
T
C
=150 C
o
I
D
, Drain Current (A)
4
0.37Ω
2
10V
8.0V
7.0V
6.0V
3
V
G
=6.0V
2
1
1
V
G
=5.0V
0
0
4
8
12
16
20
0
0
4
8
12
16
20
24
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.2
4
I
D
=1A
2
T
C
=25 C
Normalized R
DS(ON)
3
o
I
D
=1A
V
G
=10V
R
DS(ON)
(
Ω
)
1.8
1.6
.
2
1.4
1
1.2
1
4
5
6
7
8
9
10
0
-100
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
8
I
D
=250uA
1.6
6
Normalized V
GS(th)
I
S
(A)
1.2
4
T
j
= 150 C
o
T
j
= 25 C
o
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0
-100
-50
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP70SL1K4AI
12
f=1.0MHz
10000
10
I
D
=1.5A
V
DS
=480V
1000
V
GS
, Gate to Source Voltage (V)
C
iss
8
6
C (pF)
100
0.37Ω
C
oss
C
rss
10
4
1
2
0
0
4
8
12
16
0.1
0
100
200
300
400
500
600
700
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Normalized Thermal Response (R
thjc
)
Operation in this area
limited by R
DS(ON)
10us
Duty factor=0.5
0.2
1
100us
0.1
0.1
I
D
(A)
0.05
0.1
1ms
10ms
100ms
DC
.
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
T
C
=25
o
C
Single Pulse
0.001
1
10
100
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
40
2
I
D
=1mA
P
D
, Power Dissipation (W)
1.6
30
Normalized BV
DSS
0
50
100
150
1.2
20
0.8
10
0.4
0
0
-100
-50
0
50
100
150
T
C
, Case Temperature ( C )
o
T
j
, Junction Temperature ( C)
o
Fig 11. Total Power Dissipation
Fig 12. Normalized BV
DSS
v.s. Junction
Temperature
4
AP70SL1K4AI
MARKING INFORMATION
Part Number
70SL1K4A
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5
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