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2SB870_15

Description
Silicon PNP Power Transistors
File Size58KB,4 Pages
ManufacturerJinmei
Websitehttp://www.jmnic.com/
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2SB870_15 Overview

Silicon PNP Power Transistors

JMnic
Product Specification
Silicon PNP Power Transistors
2SB870
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD866
・Low
collector saturation voltage
・High
collector current capability
APPLICATIONS
・For
power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-130
-80
-7
-7
-15
40
150
-50~150
UNIT
V
V
V
A
A
W

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Index Files: 2516  2400  1939  2468  2557  51  49  40  50  52 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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