JMnic
Product Specification
Silicon PNP Power Transistors
2SB870
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD866
・Low
collector saturation voltage
・High
collector current capability
APPLICATIONS
・For
power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-130
-80
-7
-7
-15
40
150
-50~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB870
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA; I
B
=0
-80
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-5A; I
B
=-0.25A
-0.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=-5A; I
B
=-0.25A
-1.5
V
μA
I
CBO
Collector cut-off current
V
CB
=-100V; I
E
=0
-10
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-50
μA
h
FE-1
DC current gain
I
C
=-0.1A ; V
CE
=-2V
45
h
FE-2
DC current gain
I
C
=-3A ; V
CE
=-2V
60
260
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-10V
30
MHz
Switching times
μs
t
on
Turn-on time
0.1
t
stg
Storage time
I
C
=-3A ; I
B1
=-I
B2
=-0.3A
0.8
μs
t
f
Fall time
0.1
μs
h
FE-2
Classifications
R
60-120
Q
90-180
P
130-260
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB870
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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