JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-220Fa package
・Complement
to type 2SD1271
・Low
saturation voltage
・Good
linearity of h
FE
・High
current
APPLICATIONS
・For
power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
2SB946
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-130
-80
-7
-7
-15
40
W
V
A
A
UNIT
V
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-10mA , I
B
=0
I
C
=-5A; I
B
=-0.25A
I
C
=-5A; I
B
=-0.25A
V
CB
=-100V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.1A ; V
CE
=-2V
I
C
=-3A ; V
CE
=-2V
I
C
=-0.5A ; V
CE
=-10V
45
60
30
MIN
-80
2SB946
TYP.
MAX
UNIT
V
-0.5
-1.5
-10
-50
V
V
μA
μA
260
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-3A ;I
B1
=-0.3A
I
B2
=0.3A
0.5
1.5
0.1
μs
μs
μs
h
FE-2
Classifications
R
60-120
Q
90-180
P
130-260
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB946
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB946
4
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