HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
V
DSS
IXFH14N80
IXFH15N80
I
D25
R
DS(on)
800 V 14 A 0.70
Ω
800 V 15 A 0.60
Ω
t
rr
≤
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum Ratings
800
800
±20
±30
14N80
15N80
14N80
15N80
14N80
15N80
14
15
56
60
14
15
30
5
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
TO-247 AD
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
300
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
°C
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
•
Low package inductance
- easy to drive and to protect
•
Fast intrinsic Rectifier
•
•
•
•
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10 Nm/lb.in.
6
g
Applications
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DSS
temperature coefficient
V
DS
= V
GS
, I
D
= 4 mA
V
GS(th)
temperature coefficient
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
T
J
= 25°C
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
800
0.096
2.5
-0.214
±100
25
1
0.70
0.60
4.5
V
%/K
V
%/K
nA
µA
mA
Ω
Ω
Advantages
•
Easy to mount with 1 screw
•
•
•
•
•
•
•
•
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
14N80
15N80
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
(isolated mounting screw hole)
•
Space savings
•
High power density
© 2002 IXYS All rights reserved
DS96523D(12/02)
IXFH 14N80
IXFH 15N80
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
8
3965
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
315
73
20
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 2
Ω
(External)
33
63
32
14
4870
395
120
50
50
100
50
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
1
2
3
TO-247 AD Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
Dim.
150 200
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
23
64
45
68
0.42
0.25
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Repetitive;
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
14N80
15N80
14N80
15N80
14
15
56
60
1.5
250
400
1
8.5
A
A
A
A
V
ns
ns
µC
A
Millimeter
Min.
Max.
A
4.7
5.3
2.2
2.54
A
1
A
2
2.2
2.6
b
1.0
1.4
b
1
1.65
2.13
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= I
S
-di/dt = 100 A/µs,
V
R
= 100 V
T
J
= 25°C
T
J
= 125°C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXFH 14N80
IXFH 15N80
Figure 1. Output Characteristics at 25
O
C
20
T
J
= 25
O
C
Figure 2. Output Characteristics at 125
O
C
20
16
I
D
- Amperes
I
D
- Amperes
V
GS
= 9V
8V
7V
6V
T
J
= 125
O
C
16
5V
V
GS
= 9V
8V
7V
6V
5V
12
8
4
0
12
8
4
0
4V
4V
0
2
4
6
8
10
0
4
8
12
16
20
V
DS
- Volts
V
DS
- Volts
Figure 3. R
DS(on)
normalized to 0.5 I
D25
value vs. I
D
2.6
2.4
V
GS
= 10V
Figure 4. R
DS(on)
normalized to 0.5 I
D25
value vs. T
J
2.6
R
DS(ON)
- Normalized
R
DS(ON)
- Normalized
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
5
T
J
= 125
O
C
2.4
2.2
2.0
1.8
1.6
1.4
1.2
V
GS
= 10V
I
D
= 15A
T
J
= 25
O
C
I
D
= 7.5A
10
15
20
25
1.0
25
50
75
100
125
150
I
D
- Amperes
T
J
- Degrees C
Figure 5. Drain Current vs. Case Temperature
20
16
Figure 6. Admittance Curves
16
14
I
D
- Amperes
I
D
- Amperes
IXFH15N80
12
10
8
6
4
2
T
J
= 125
o
C
T
J
= 25
o
C
12
8
4
0
-50
IXFH14N80
-25
0
25
50
75
100 125 150
0
2
3
4
5
6
7
T
C
- Degrees C
V
GS
- Volts
© 2002 IXYS All rights reserved
IXFH 14N80
IXFH 15N80
Figure 7. Gate Charge
12
10
V
DS
= 400V
I
D
= 14A
I
G
= 1mA
Figure 8. Capacitance Curves
5000
Ciss
2500
V
GS
- Volts
8
6
4
2
0
Capacitance - pF
f = 1MHz
1000
500
250
100
Coss
Crss
0
50
100
150
200
250
50
0
5
10
15
20
25
30
35
40
Gate Charge - nC
V
DS
- Volts
Figure 9. Source Current vs. Source to Drain Voltage
50
40
I
D
- Amperes
30
T
J
= 125
O
C
20
10
T
J
= 25
O
C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
- Volts
Figure 11. Transient Thermal Resistance
1
D=0.5
Z
thJC
- (K/W)
0.1
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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