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SBS005

Description
1 A, 30 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size31KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

SBS005 Overview

1 A, 30 V, SILICON, SIGNAL DIODE

SBS005 Parametric

Parameter NameAttribute value
package instructionR-PDSO-G3
Contacts3
Manufacturer packaging codeCPH3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.47 V
JESD-30 codeR-PDSO-G3
Maximum non-repetitive peak forward current10 A
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.015 µs
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
Ordering number:ENN6273
Schottky Barrier Diode
SBS005
30V, 1A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1293
[SBS005]
2.9
0.4
3
Features
· Low forward voltage (I
F
=0.5A, V
F
max=0.40V)
(I
F
=1.0A, V
F
max=0.47V).
· Ultrasmall-sized package, permitting SBS005-
applied sets to be compact and slim.
1
0.6
0.05
2
1.9
0.2
0.6
1.6
2.8
1 : Anode
2 : No Contact
3 : Cathode
SANYO : CPH3
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1 cycle
Conditions
0.7
0.9
Ratings
30
30
1
10
–55 to +125
–55 to +125
0.2
0.15
Unit
V
V
A
A
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF1
VF2
IR
C
trr
Rth(j-a)
IR=1mA
IF=0.5A
IF=1A
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
35
15
110
Conditons
Ratings
min
30
0.35
0.42
0.40
0.47
500
typ
max
Unit
V
V
V
µA
pF
ns
Mounted on a ceramic board (600mm
×0.8mm)
2
˚C/W
Marking : SD
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73099GI (KT) No.6273–1/3

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