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MUR105

Description
SILICON, RECTIFIER DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size72KB,3 Pages
ManufacturerYFWDIODE
Websitehttp://www.yfwdiode.com/
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MUR105 Overview

SILICON, RECTIFIER DIODE, DO-41

MUR105
THRU
MUR1100
Features
High Surge Capability
Low Forward Voltage Drop
High Current Capability
Super Fast Switching Speed For High Efficiency
Maximum Ratings
Operating Temperature: -50°C to +150°C
Storage Temperature: -50°C to +150°C
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
150V
200V
400V
600V
800V
1000V
Maximum
RMS Voltage
35V
70V
105V
140V
280V
420V
560V
700V
Maximum DC
Blocking
Voltage
50V
100V
150V
200V
400V
600V
800V
1000V
1 Amp Super Fast
Recovery Rectifier
50 to 1000 Volts
DO-41
Part Number
MUR105
MUR110
MUR115
MUR120
MUR140
MUR160
MUR180
MUR1100
D
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Average Forward
I
F(AV)
1A
T
A
= 55°C
Current
Peak Forward Surge
I
FSM
35A
8.3ms, half sine
Current
Maximum
Instantaneous
Forward Voltage
I
FM
= 1.0A;
V
F
.975V
MUR105-115
1.35V
MUR120-160
T
A
= 25°C
1.75V
MUR180-1100
Maximum DC
I
R
Reverse Current At
5μA
T
A
= 25°C
Rated DC Blocking
50μA
T
A
= 150°C
Voltage
Maximum Reverse
Recovery Time
MUR105-120
T
rr
45ns
I
F
=0.5A, I
R
=1.0A,
MUR140-160
60ns
I
rr
=0.25A
MUR180-1100
75ns
Measured at
Typical Junction
20pF
C
J
1.0MHz, V
R
=4.0V
Capacitance
*Pulse Test: Pulse Width 300μsec, Duty Cycle 1%
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
MIN
.166
.080
.028
1.000
MM
MIN
4.10
2.00
.70
25.40
DIM
A
B
C
D
MAX
.205
.107
.034
---
MAX
5.20
2.70
.90
---
NOTE

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MUR105 MUR1100 MUR115 MUR140 MUR180 MUR160 MUR120 MUR110
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