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SBG1025L-T

Description
10 A, 30 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size72KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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SBG1025L-T Overview

10 A, 30 V, SILICON, RECTIFIER DIODE

SBG1025L - SBG1030L
10A SCHOTTKY BARRIER RECTIFIER
SPICE MODELS: SBG1025L SBG1030L
Features
NEW PRODUCT
·
·
·
·
·
·
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
Very Low Forward Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
E
A
4
D
2
PAK
G
H
J
Dim
A
B
C
D
E
G
H
Min
9.65
14.60
0.51
2.29
4.37
1.14
1.14
8.25
0.30
2.03
2.29
Max
10.69
15.88
1.14
2.79
4.83
1.40
1.40
9.25
0.64
2.92
2.79
B
1
2
3
Mechanical Data
·
·
·
·
·
·
Case: D
2
PAK Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: Type Number
Weight: 1.7 grams (approx.)
Ordering Information: See Sheet 2
@ T
A
= 25°C unless otherwise specified
M
D
C
PIN 1
PIN 3
K
L
PIN 2 & 4
J
K
L
M
All Dimensions in mm
Maximum Ratings
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
C
= 120°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Typical Thermal Resistance Junction to Case (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
R
qJC
T
j
T
STG
SBG1025L
25
18
10
200
3.0
-65 to +125
-65 to +150
SBG1030L
30
21
Unit
V
V
A
A
°C/W
°C
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
SBG1025L
SBG1030L
V
(BR)R
Min
25
30
¾
¾
¾
¾
¾
¾
¾
Typ
¾
¾
¾
0.34
¾
0.48
¾
150
350
Max
¾
¾
0.45
0.36
0.55
0.50
1.0
260
¾
Unit
V
V
V
Test Condition
I
R
= 1mA
@ I
F
= 10A, T
C
= 25°C
@ I
F
= 10A, T
C
= 125°C
@ I
F
= 20A, T
C
= 25°C
@ I
F
= 20A, T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
f = 1.0MHz, V
R
= 4.0V DC
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
Notes:
V
FM
I
RM
C
j
mA
pF
1. Thermal resistance: junction to case mounted on heat sink.
DS30127 Rev. 3 - 2
1 of 3
www.diodes.com
SBG1025L - SBG1030L
ã
Diodes Incorporated

SBG1025L-T Related Products

SBG1025L-T SBG1030L-T
Description 10 A, 30 V, SILICON, RECTIFIER DIODE 10 A, 30 V, SILICON, RECTIFIER DIODE

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