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SBFP420M

Description
UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications
CategoryDiscrete semiconductor    The transistor   
File Size44KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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SBFP420M Overview

UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications

SBFP420M Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSANYO
package instructionSMALL OUTLINE, R-PDSO-F4
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.035 A
Collector-based maximum capacity0.3 pF
Collector-emitter maximum voltage4.5 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
highest frequency bandC BAND
JESD-30 codeR-PDSO-F4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.16 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)25000 MHz
Ordering number : 0000000
SBFP420M
NPN Epitaxial Planar Silicon Transistor
SBFP420M
UHF to C Band Low-Noise
Amplifier Low Phase Noise Osc.Applications
Preliminary
Features
Package Dimensions
unit : mm
0000
[SBFP420M]
0.25
Low noise : NF=1.1dB typ (f=1.8GHz).
High cut-off frequency : fT=18GHz typ (VCE=1V).
: fT=25GHz typ (VCE=3V).
Low operating voltage.
High gain :
S21e
2
=17dB typ (f=1.8GHz).
0.3
4
3
0.15
1.6
1
1.3
2.0
2
0.25
2.1
0.85
1:Collector
2:Emitter
3:Base
4:Emitter
SANYO:MCPH4
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to- Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
15
4.5
1.5
35
160
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Marking:MB
Symbol
ICBO
IEBO
hFE
fT(1)
fT(2)
Cre
S21e
2
(1)
S21e
2
(2)
NF
VCB=5V, IE=0
VEB=1.5V, IC=0
VCE=4V, IC=20mA
VCE=1V, IC=10mA
VCE=3V, IC=30mA
VCB=2V, f=1MHz
VCE=2V, IC=5mA, f=1.8GHz
VCE=2V, IC=20mA, f=1.8GHz
VCE=2V, IC=5mA, f=1.8GHz
50
13
18
12
14
18
25
0.15
15
17
1.1
0.3
Conditions
Ratings
min
typ
max
200
35
150
GHz
GHz
pF
dB
dB
dB
Unit
nA
µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
HD Seigi 010521 matumiya-1/2
0.15
Specifications

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