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SBA50-04Y

Description
5 A, 40 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size74KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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SBA50-04Y Overview

5 A, 40 V, SILICON, RECTIFIER DIODE

Ordering number:EN4572
SBA50-04Y
Schottky Barrier Diode (Twin Type · Cathode Common)
40V, 5A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1262A
[SBA50-04Y]
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time.
· Low switching noise.
· High reliability due to highly reliable planner
structure.
· Surface mount type device reducing the assembling
time and facilitating compact and high-density
assembly of SBA50-04Y-applied equipment.
1:Anode
2:Cathode
3:Anode
SANYO:SMP-FD
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
Ratings
40
44
Unit
V
V
A
A
50Hz, resistive load, Tc=109˚C
50Hz sine wave, 1 cycle
5
80
–55 to +125
–55 to +125
˚C
˚C
Electrical Characteristics
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Thermal Resistance
Symbol
VR
VF
IR
C
Rth(j-c)
IR=1mA, Tj=25˚C, *
IF=2.5A, Tj=25˚C, *
VR=20V, Tj=25˚C, *
VR=10V, Tj=25˚C, *
Conditons
Ratings
min
40
0.55
0.1
160
4.0
typ
max
Unit
V
V
mA
pF
˚C/W
Junction-Case:Smoothed DC
Note*:Value per element
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41098HA (KT)11895MO(KOTO) AX-7815 No.4572-1/3

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Index Files: 442  231  457  2277  2785  9  5  10  46  57 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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