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SBA50-09J

Description
5 A, 90 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size76KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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SBA50-09J Overview

5 A, 90 V, SILICON, RECTIFIER DIODE

SBA50-09J Parametric

Parameter NameAttribute value
MakerSANYO
Parts packaging codeTO-220ML
package instructionR-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationPOWER
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.75 V
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current60 A
Number of components2
Phase1
Number of terminals3
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage90 V
Maximum reverse current100 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
Ordering number:EN4681
SBA50-09J
Schottky Barrier Diode (Twin Type · Cathode Common)
90V, 5A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1178A
[SBA50-09J]
Features
· Low forward voltage (VF max=0.75V).
· Fast reverse recovery time.
· Low switching noise.
· High reliability due to highly reliable planar
structure.
· Micaless package facilitating easy mounting.
1:Anode
2:Cathode
3:Anode
SANYO:TO-220ML
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
Ratings
90
95
Unit
V
V
A
A
50Hz, resistive load, Tc=94˚C
50Hz sine wave, 1 cycle
5
60
–55 to +125
–55 to +125
˚C
˚C
Electrical Characteristics
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Thermal Resistance
Symbol
VR
VF
IR
C
Rth(j-c)
IR=1mA, Tj=25˚C, *
IF=2.5A, Tj=25˚C, *
VR=45V, Tj=25˚C, *
VR=10V, Tj=25˚C, *
Conditons
Ratings
min
90
0.75
0.1
90
5.0
typ
max
Unit
V
V
mA
pF
˚C/W
Junction-Case:Smoothed DC
Note*:Value per element
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41098HA (KT)/83194MO (KOTO) AX-7816 No.4681-1/3
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