SS52F THRU SS520F
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200V
Forward Current - 5.0A
FEATURES
•
Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
Top View
Marking Code: SS52 — SS520
Simplified outline SMAF and symbol
MECHANICAL DATA
•
Case: SMAF
•
Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 27mg / 0.00095oz
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols
SS52F
SS54F
SS56F
SS58F
SS510F
SS512F
SS515F
SS520F
Units
Maximum Repetitive Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
40
28
40
60
42
60
80
56
80
5.0
100
70
100
120
84
120
150
105
150
200
140
200
V
V
V
A
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
I
FSM
150
A
Max Instantaneous Forward Voltage at 5 A
V
F
0.45
0.55
0.70
1.0
50
0.85
V
Maximum DC Reverse Current
at Rated DC Reverse Voltage
T
a
= 25°C
T
a
=100°C
I
R
mA
Typical Junction Capacitance
1）
C
j
2）
800
45
-55 ~ +125
-55 ~ +150
500
pF
°C/W
°C
°C
Typical Thermal Resistance
R
θJA
T
j
T
stg
Operating Junction Temperature Range
Storage Temperature Range
at 1MHz and applied reverse voltage of 4 V D.C.
2）
P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm) copper pad areas.
1）
Measured
SS52F THRU SS520F
Fig.1 Forward Current Derating Curve
Instaneous Reverse Current (
μA)
6.0
10
4
Fig.2 Typical Reverse Characteristics
Average Forward Current (A)
100LFM
5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
Single phase half wave resistive
or inductive P.C.B mounted on
0.5×0.5"(12.7
×12.7mm
) pad areas
T
J
=100
°C
10
3
10
2
T
J
=75
°C
10
1
T
J
=25
°C
10
0
0
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage（%）
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Fig.4 Typical Junction Capacitance
20
10
T
J
=25
°C
Junction Capacitance ( pF)
1000
500
1
SS52F
SS54F
SS56F/SS58F
SS510F/SS520F
100
SS52F/SS54F
20
10
0.1
SS54F/SS520F
SS56F-SS520F
0.1
0
0.5
1.0
1.5
2.0
1
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
175
150
125
100
75
50
25
00
1
10
100
8.3 ms Single Half Sine Wave
(JEDEC Method)
Transient Thermal Impedance（
°C
/W）
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
Fig.6- Typical Transient Thermal Impedance
100
10
1
0.01
0.1
1
10
100
Number of Cycles at 60Hz
t, Pulse Duration（sec）
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