SB806 datasheet, PDF - EEWORLD Datasheet

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SB806: Description8 A, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size61KB，2 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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SB806 Overview

8 A, SILICON, BRIDGE RECTIFIER DIODE

SB806 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
Reach Compliance Code	unknow
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	200 A
Number of components	4
Maximum operating temperature	125 °C
Maximum output current	8 A
Maximum repetitive peak reverse voltage	800 V
surface mount	NO

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SB801

THRU

SB807

Single Phase 8.0 AMPS. Silicon Bridge Rectifiers

Voltage Range

50 to 1000 Volts

Current

8.0 Amperes

Features

UL Recognized File # E-96005

Surge overload rating 250 amperes peak

Low forward voltage drop

High temperature soldering guaranteed:

260℃ / 10 seconds / 0.375” ( 9.5mm )

lead length at 5 lbs., ( 2.3 kg ) tension

Small size, simple installation

Leads solderable per MIL-STD-202

Method 208

SB-10

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25℃ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Symbol

Type Number

801 802

Maximum Recurrent Peak Reverse Voltage

50 100

RRM

Maximum RMS Voltage

RMS

Maximum DC Blocking Voltage

50 100

Maximum Average Forward Rectified Current

= 50℃

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

Maximum Instantaneous Forward Voltage

@ 4.0A

Maximum DC Reverse Current @ T

=25℃

at Rated DC Blocking Voltage @ T

=100℃

Typical Thermal Resistance (Note)

Operating Temperature Range

Storage Temperature Range

803

804

805

806

807

Units

℃

200

140

200

400

280

400

8.0

250

1.0

600

420

600

800 1000

560 700

800 1000

(AV)

FSM

STG

Note: Thermal Resistance from Junction to Case.

500

-55 to +125

-55 to +150

- 682 -

SB806 Related Products

	SB806	SB807	SB805	SB804	SB802	SB803	SB801
Description	8 A, SILICON, BRIDGE RECTIFIER DIODE	8 A, SILICON, BRIDGE RECTIFIER DIODE	8 A, SILICON, BRIDGE RECTIFIER DIODE	8 A, SILICON, BRIDGE RECTIFIER DIODE	8 A, SILICON, BRIDGE RECTIFIER DIODE	8 A, SILICON, BRIDGE RECTIFIER DIODE	8 A, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
Humidity sensitivity level	1	1	1	1	1	1	1
Maximum non-repetitive peak forward current	200 A	200 A	200 A	200 A	200 A	200 A	200 A
Number of components	4	4	4	4	4	4	4
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Maximum output current	8 A	8 A	8 A	8 A	8 A	8 A	8 A
Maximum repetitive peak reverse voltage	800 V	1000 V	600 V	400 V	100 V	200 V	50 V
surface mount	NO	NO	NO	NO	NO	NO	NO
Maker	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	-	Taiwan Semiconductor

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