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SB804

Description
8 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size61KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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SB804 Overview

8 A, SILICON, BRIDGE RECTIFIER DIODE

SB804 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Humidity sensitivity level1
Maximum non-repetitive peak forward current200 A
Number of components4
Maximum operating temperature125 °C
Maximum output current8 A
Maximum repetitive peak reverse voltage400 V
surface mountNO
SB801
THRU
SB807
Single Phase 8.0 AMPS. Silicon Bridge Rectifiers
Voltage Range
50 to 1000 Volts
Current
8.0 Amperes
Features
UL Recognized File # E-96005
Surge overload rating 250 amperes peak
Low forward voltage drop
High temperature soldering guaranteed:
260℃ / 10 seconds / 0.375” ( 9.5mm )
lead length at 5 lbs., ( 2.3 kg ) tension
Small size, simple installation
Leads solderable per MIL-STD-202
Method 208
SB-10
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
SB
SB
Type Number
801 802
Maximum Recurrent Peak Reverse Voltage
50 100
V
RRM
Maximum RMS Voltage
35
70
V
RMS
Maximum DC Blocking Voltage
50 100
V
DC
Maximum Average Forward Rectified Current
@T
A
= 50℃
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 4.0A
Maximum DC Reverse Current @ T
A
=25℃
at Rated DC Blocking Voltage @ T
A
=100℃
Typical Thermal Resistance (Note)
Operating Temperature Range
Storage Temperature Range
SB
803
SB
804
SB
805
SB
806
SB
807
Units
V
V
V
A
A
V
uA
uA
200
140
200
400
280
400
8.0
250
1.0
600
420
600
800 1000
560 700
800 1000
I
(AV)
I
FSM
V
F
I
R
R
θ
JC
T
J
T
STG
Note: Thermal Resistance from Junction to Case.
10
500
6
-55 to +125
-55 to +150
- 682 -

SB804 Related Products

SB804 SB807 SB806 SB805 SB802 SB803 SB801
Description 8 A, SILICON, BRIDGE RECTIFIER DIODE 8 A, SILICON, BRIDGE RECTIFIER DIODE 8 A, SILICON, BRIDGE RECTIFIER DIODE 8 A, SILICON, BRIDGE RECTIFIER DIODE 8 A, SILICON, BRIDGE RECTIFIER DIODE 8 A, SILICON, BRIDGE RECTIFIER DIODE 8 A, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
Humidity sensitivity level 1 1 1 1 1 1 1
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A 200 A 200 A 200 A
Number of components 4 4 4 4 4 4 4
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Maximum output current 8 A 8 A 8 A 8 A 8 A 8 A 8 A
Maximum repetitive peak reverse voltage 400 V 1000 V 800 V 600 V 100 V 200 V 50 V
surface mount NO NO NO NO NO NO NO
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor - Taiwan Semiconductor
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